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Title: Two-step narrow ridge cascade diode lasers emitting near $$2~\mu$$ m

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
BNL-113990-2017-JA
Journal ID: ISSN 1041-1135; KC0403020
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
IEEE Photonics Technology Letters
Additional Journal Information:
Journal Volume: 29; Journal Issue: 6; Journal ID: ISSN 1041-1135
Publisher:
IEEE
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; waveguide lasers; quantum cascade lasers; optical waveguides; laser modes; measurement by laser beam; current density; Center for Functional Nanomaterials; infrared; type-I quantum well; GaSb-based; cascade pumping; diffraction limited beam
OSTI Identifier:
1368667