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Title: Crystallization kinetics of the phase change material GeSb 6Te measured with dynamic transmission electron microscopy

Abstract

GeSb 6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb 6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s –1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.

Authors:
 [1];  [2];  [3];  [1]
  1. Oregon State Univ., Corvallis, OR (United States)
  2. Macronix International Co., Ltd., Hsinchu (Taiwan)
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1367973
Report Number(s):
LLNL-JRNL-681060
Journal ID: ISSN 1477-9226; ICHBD9
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Dalton Transactions
Additional Journal Information:
Journal Volume: 45; Journal Issue: 24; Journal ID: ISSN 1477-9226
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Winseck, M. M., Cheng, H. -Y., Campbell, G. H., and Santala, Melissa K. Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy. United States: N. p., 2016. Web. doi:10.1039/C6DT00298F.
Winseck, M. M., Cheng, H. -Y., Campbell, G. H., & Santala, Melissa K. Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy. United States. doi:10.1039/C6DT00298F.
Winseck, M. M., Cheng, H. -Y., Campbell, G. H., and Santala, Melissa K. Wed . "Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy". United States. doi:10.1039/C6DT00298F. https://www.osti.gov/servlets/purl/1367973.
@article{osti_1367973,
title = {Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy},
author = {Winseck, M. M. and Cheng, H. -Y. and Campbell, G. H. and Santala, Melissa K.},
abstractNote = {GeSb6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s–1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measured growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.},
doi = {10.1039/C6DT00298F},
journal = {Dalton Transactions},
number = 24,
volume = 45,
place = {United States},
year = {2016},
month = {3}
}

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