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Title: a-Si:H TFT-silicon hybrid low-energy x-ray detector

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers for X-ray diffraction and crystallography applications.
Authors:
ORCiD logo [1] ;  [2]
  1. Argonne National Lab. (ANL), Argonne, IL (United States)
  2. Univ. of Waterloo, Waterloo, ON (Canada)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Electron Devices
Additional Journal Information:
Journal Volume: 64; Journal Issue: 4; Journal ID: ISSN 0018-9383
Publisher:
IEEE
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
Natural Sciences and Engineering Research Council of Canada (NSERC); USDOE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; silicon radiation detectors; thin film transistors; x-ray image sensors
OSTI Identifier:
1367158