Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes

Collins, Kimberlee C.; King, Michael P.; Dickerson, Jeramy R.; Vizkelethy, Gyorgy; Armstrong, Andrew M.; Fischer, A. J.; Allerman, Andrew A.; Kaplar, Robert J.; Aktas, Ozgur; Kizilyalli, Isik C.; Talin, Albert A.; Leonard, Francois

doi:10.1109/led.2017.2708703

Title: Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes

Abstract

Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN pin diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.

Authors:

^[1]; King, Michael P. ^[2]; Dickerson, Jeramy R. ^[2]; Vizkelethy, Gyorgy ^[2]; Armstrong, Andrew M. ^[2]; Fischer, A. J. ^[2]; Allerman, Andrew A. ^[2]; Kaplar, Robert J. ^[2]; Aktas, Ozgur ^[3]; Kizilyalli, Isik C. ^[4]; Talin, Albert A. ^[1]; Leonard, Francois ^[1]

Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Quora Technology Inc., Santa Clara, CA (United States)
Dept. of Energy (DOE), Washington DC (United States). Advanced Research Projects Agency-Energy (ARPA-E)

Publication Date:: Mon May 29 00:00:00 EDT 2017

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1367089

Report Number(s):: SAND-2017-6490J
Journal ID: ISSN 0741-3106; 654636

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Electron Device Letters

Additional Journal Information:: Journal Volume: 38; Journal Issue: 7; Journal ID: ISSN 0741-3106

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats


                    Collins, Kimberlee C., King, Michael P., Dickerson, Jeramy R., Vizkelethy, Gyorgy, Armstrong, Andrew M., Fischer, A. J., Allerman, Andrew A., Kaplar, Robert J., Aktas, Ozgur, Kizilyalli, Isik C., Talin, Albert A., and Leonard, Francois. Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes.  United States: N. p., 2017. 
Web.  doi:10.1109/led.2017.2708703.

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                    Collins, Kimberlee C., King, Michael P., Dickerson, Jeramy R., Vizkelethy, Gyorgy, Armstrong, Andrew M., Fischer, A. J., Allerman, Andrew A., Kaplar, Robert J., Aktas, Ozgur, Kizilyalli, Isik C., Talin, Albert A., & Leonard, Francois. Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes.  United States.  https://doi.org/10.1109/led.2017.2708703

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                    Collins, Kimberlee C., King, Michael P., Dickerson, Jeramy R., Vizkelethy, Gyorgy, Armstrong, Andrew M., Fischer, A. J., Allerman, Andrew A., Kaplar, Robert J., Aktas, Ozgur, Kizilyalli, Isik C., Talin, Albert A., and Leonard, Francois. Mon .  
"Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes".  United States.  https://doi.org/10.1109/led.2017.2708703.  https://www.osti.gov/servlets/purl/1367089.

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@article{osti_1367089,

  title        = {Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes},

  author       = {Collins, Kimberlee C. and King, Michael P. and Dickerson, Jeramy R. and Vizkelethy, Gyorgy and Armstrong, Andrew M. and Fischer, A. J. and Allerman, Andrew A. and Kaplar, Robert J. and Aktas, Ozgur and Kizilyalli, Isik C. and Talin, Albert A. and Leonard, Francois},

  abstractNote = {Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN pin diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.},

  doi          = {10.1109/led.2017.2708703},

  journal      = {IEEE Electron Device Letters},

  number       = 7,

  volume       = 38,

  place        = {United States},

  year         = {Mon May 29 00:00:00 EDT 2017},

  month        = {Mon May 29 00:00:00 EDT 2017}

}

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Works referencing / citing this record:

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes
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Hou, Xu; Chen, Xin; Jia, Xingyu
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DOI: 10.1002/pssa.201900210

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Title: Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes

Abstract

Citation Formats

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes journal, July 2019

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes
journal, July 2019