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Title: Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes

Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN pin diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.
Authors:
ORCiD logo [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [4] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Quora Technology Inc., Santa Clara, CA (United States)
  4. Dept. of Energy (DOE), Washington DC (United States). Advanced Research Projects Agency-Energy (ARPA-E)
Publication Date:
Report Number(s):
SAND-2017-6490J
Journal ID: ISSN 0741-3106; 654636
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 38; Journal Issue: 7; Journal ID: ISSN 0741-3106
Publisher:
IEEE
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
OSTI Identifier:
1367089

Collins, Kimberlee C., King, Michael P., Dickerson, Jeramy R., Vizkelethy, Gyorgy, Armstrong, Andrew M., Fischer, A. J., Allerman, Andrew A., Kaplar, Robert J., Aktas, Ozgur, Kizilyalli, Isik C., Talin, Albert A., and Leonard, Francois. Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes. United States: N. p., Web. doi:10.1109/led.2017.2708703.
Collins, Kimberlee C., King, Michael P., Dickerson, Jeramy R., Vizkelethy, Gyorgy, Armstrong, Andrew M., Fischer, A. J., Allerman, Andrew A., Kaplar, Robert J., Aktas, Ozgur, Kizilyalli, Isik C., Talin, Albert A., & Leonard, Francois. Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes. United States. doi:10.1109/led.2017.2708703.
Collins, Kimberlee C., King, Michael P., Dickerson, Jeramy R., Vizkelethy, Gyorgy, Armstrong, Andrew M., Fischer, A. J., Allerman, Andrew A., Kaplar, Robert J., Aktas, Ozgur, Kizilyalli, Isik C., Talin, Albert A., and Leonard, Francois. 2017. "Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes". United States. doi:10.1109/led.2017.2708703. https://www.osti.gov/servlets/purl/1367089.
@article{osti_1367089,
title = {Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes},
author = {Collins, Kimberlee C. and King, Michael P. and Dickerson, Jeramy R. and Vizkelethy, Gyorgy and Armstrong, Andrew M. and Fischer, A. J. and Allerman, Andrew A. and Kaplar, Robert J. and Aktas, Ozgur and Kizilyalli, Isik C. and Talin, Albert A. and Leonard, Francois},
abstractNote = {Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN pin diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.},
doi = {10.1109/led.2017.2708703},
journal = {IEEE Electron Device Letters},
number = 7,
volume = 38,
place = {United States},
year = {2017},
month = {5}
}