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Title: Localization dynamics of excitons in disordered semiconductor quantum wells

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Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Grant/Contract Number:  
DE5 FG02-02ER15346
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 23; Journal ID: ISSN 2469-9950
American Physical Society (APS)
Country of Publication:
United States

Citation Formats

Singh, Rohan, Richter, Marten, Moody, Galan, Siemens, Mark E., Li, Hebin, and Cundiff, Steven T. Localization dynamics of excitons in disordered semiconductor quantum wells. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.235307.
Singh, Rohan, Richter, Marten, Moody, Galan, Siemens, Mark E., Li, Hebin, & Cundiff, Steven T. Localization dynamics of excitons in disordered semiconductor quantum wells. United States. doi:10.1103/PhysRevB.95.235307.
Singh, Rohan, Richter, Marten, Moody, Galan, Siemens, Mark E., Li, Hebin, and Cundiff, Steven T. Fri . "Localization dynamics of excitons in disordered semiconductor quantum wells". United States. doi:10.1103/PhysRevB.95.235307.
title = {Localization dynamics of excitons in disordered semiconductor quantum wells},
author = {Singh, Rohan and Richter, Marten and Moody, Galan and Siemens, Mark E. and Li, Hebin and Cundiff, Steven T.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.235307},
journal = {Physical Review B},
number = 23,
volume = 95,
place = {United States},
year = {2017},
month = {6}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.95.235307

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Cited by: 3 works
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