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Title: Thermoelectric Performance and Defect Chemistry in n-Type Zintl KGaSb 4

The rise of high-throughput calculations has accelerated the discovery of promising classes of thermoelectric materials. In prior work, we identified the n-type Zintl pnictides as one such material class. To date, however, a lack of detailed defect calculations and chemical intuition has led the community to investigate p-type Zintls almost exclusively. Here, we investigate the synthesis, thermoelectric properties, and defect structure of the complex Zintl KGaSb 4. We find that KGaSb 4 is successfully doped n-type with Ba and has the potential for p-type doping with Zn. Our calculations reveal the fundamental defect structure in KGaSb 4 that enables n-type and p-type doping. We find that Ba doped KGaSb4 exhibits high electronic mobility (~50 cm 2V -1s -1) and near minimum lattice thermal conductivity (<0.5 Wm -1K -1) at 400 °C. Samples doped with 1.5% Ba achieve zT > 0.9 at 400 °C, promising for a previously unstudied material. Here, we also briefly investigate the series of alloys between KGaSb 4 and KAlSb 4, finding that a full solid solution exists. Altogether our work reinforces motivation for the exploration of n-type Zintl materials, especially in tandem with high-throughput defect calculations to inform selection of effective dopants and systems amenable tomore » n-type transport.« less
Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [4]
  1. Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  4. Colorado School of Mines, Golden, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-68728
Journal ID: ISSN 0897-4756
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 10; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; synthesis; thermoelectric properties; defect structure
OSTI Identifier:
1365699

Ortiz, Brenden R., Gorai, Prashun, Stevanovic, Vladan, and Toberer, Eric S.. Thermoelectric Performance and Defect Chemistry in n-Type Zintl KGaSb4. United States: N. p., Web. doi:10.1021/acs.chemmater.7b01217.
Ortiz, Brenden R., Gorai, Prashun, Stevanovic, Vladan, & Toberer, Eric S.. Thermoelectric Performance and Defect Chemistry in n-Type Zintl KGaSb4. United States. doi:10.1021/acs.chemmater.7b01217.
Ortiz, Brenden R., Gorai, Prashun, Stevanovic, Vladan, and Toberer, Eric S.. 2017. "Thermoelectric Performance and Defect Chemistry in n-Type Zintl KGaSb4". United States. doi:10.1021/acs.chemmater.7b01217. https://www.osti.gov/servlets/purl/1365699.
@article{osti_1365699,
title = {Thermoelectric Performance and Defect Chemistry in n-Type Zintl KGaSb4},
author = {Ortiz, Brenden R. and Gorai, Prashun and Stevanovic, Vladan and Toberer, Eric S.},
abstractNote = {The rise of high-throughput calculations has accelerated the discovery of promising classes of thermoelectric materials. In prior work, we identified the n-type Zintl pnictides as one such material class. To date, however, a lack of detailed defect calculations and chemical intuition has led the community to investigate p-type Zintls almost exclusively. Here, we investigate the synthesis, thermoelectric properties, and defect structure of the complex Zintl KGaSb4. We find that KGaSb4 is successfully doped n-type with Ba and has the potential for p-type doping with Zn. Our calculations reveal the fundamental defect structure in KGaSb4 that enables n-type and p-type doping. We find that Ba doped KGaSb4 exhibits high electronic mobility (~50 cm2V-1s-1) and near minimum lattice thermal conductivity (<0.5 Wm-1K-1) at 400 °C. Samples doped with 1.5% Ba achieve zT > 0.9 at 400 °C, promising for a previously unstudied material. Here, we also briefly investigate the series of alloys between KGaSb4 and KAlSb4, finding that a full solid solution exists. Altogether our work reinforces motivation for the exploration of n-type Zintl materials, especially in tandem with high-throughput defect calculations to inform selection of effective dopants and systems amenable to n-type transport.},
doi = {10.1021/acs.chemmater.7b01217},
journal = {Chemistry of Materials},
number = 10,
volume = 29,
place = {United States},
year = {2017},
month = {5}
}