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Title: Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells

Abstract

For this work, high-quality InAs quantum dots (QDs) with nominal thicknesses of 5.0–8.0 monolayers were grown on a digital AlAs0.56Sb0.44 matrix lattice-matched to the InP(001) substrate. All QDs showed bimodal size distribution, and their optical properties were investigated by photoluminescence (PL) and time-resolved PL measurements. Power dependent PL exhibited a linear relationship between the peak energy and the cube root of the excitation power for both the small QD family (SQDF) and the large QD family (LQDF), which is attributed to the type-II transition. The PL intensity, peak energy, and carrier lifetime of SQDF and LQDF showed very sensitive at high temperature. Above 125 K, the PL intensity ratio increased continuously between LQDF and SQDF, the peak energy shifted anomalously in SQDF, and the longer carrier radiative lifetime (≥3.0 ns at 77 K) reduced rapidly in SQDF and slowly in LQDF. These results are ascribed to thermally activated carrier escape from SQDF into the wetting layer, which then relaxed into LQDF with low-localized energy states.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [1]
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  1. Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst. and Dept. of Electrical Engineering
Publication Date:
Research Org.:
Univ. of California, Los Angeles, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1473900
Alternate Identifier(s):
OSTI ID: 1365600
Grant/Contract Number:  
EE0005325
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 14 SOLAR ENERGY; crystallography; semiconductors; band gap; microscopy; Doppler effect; photoluminescence spectroscopy; electronic bandstructure; solar cells; quantum dots; optical properties

Citation Formats

Debnath, Mukul C., Liang, Baolai, Laghumavarapu, Ramesh B., Wang, Guodong, Das, Aparna, Juang, Bor-Chau, and Huffaker, Diana L. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells. United States: N. p., 2017. Web. doi:10.1063/1.4984832.
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Debnath, Mukul C., Liang, Baolai, Laghumavarapu, Ramesh B., Wang, Guodong, Das, Aparna, Juang, Bor-Chau, & Huffaker, Diana L. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells. United States. https://doi.org/10.1063/1.4984832
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Debnath, Mukul C., Liang, Baolai, Laghumavarapu, Ramesh B., Wang, Guodong, Das, Aparna, Juang, Bor-Chau, and Huffaker, Diana L. Tue . "Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells". United States. https://doi.org/10.1063/1.4984832. https://www.osti.gov/servlets/purl/1473900.
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@article{osti_1473900,
title = {Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb 0.44 matrix for use in intermediate band solar cells},
author = {Debnath, Mukul C. and Liang, Baolai and Laghumavarapu, Ramesh B. and Wang, Guodong and Das, Aparna and Juang, Bor-Chau and Huffaker, Diana L.},
abstractNote = {For this work, high-quality InAs quantum dots (QDs) with nominal thicknesses of 5.0–8.0 monolayers were grown on a digital AlAs0.56Sb0.44 matrix lattice-matched to the InP(001) substrate. All QDs showed bimodal size distribution, and their optical properties were investigated by photoluminescence (PL) and time-resolved PL measurements. Power dependent PL exhibited a linear relationship between the peak energy and the cube root of the excitation power for both the small QD family (SQDF) and the large QD family (LQDF), which is attributed to the type-II transition. The PL intensity, peak energy, and carrier lifetime of SQDF and LQDF showed very sensitive at high temperature. Above 125 K, the PL intensity ratio increased continuously between LQDF and SQDF, the peak energy shifted anomalously in SQDF, and the longer carrier radiative lifetime (≥3.0 ns at 77 K) reduced rapidly in SQDF and slowly in LQDF. These results are ascribed to thermally activated carrier escape from SQDF into the wetting layer, which then relaxed into LQDF with low-localized energy states.},
doi = {10.1063/1.4984832},
journal = {Journal of Applied Physics},
number = 21,
volume = 121,
place = {United States},
year = {Tue Jun 06 00:00:00 EDT 2017},
month = {Tue Jun 06 00:00:00 EDT 2017}
}
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https://doi.org/10.1063/1.4984832
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    Works referencing / citing this record:

    Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP
    journal, June 2018

    Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics
    journal, August 2019

    • Chatterjee, Arka; Panda, Debiprasad; Patwari, Jayita
    • Semiconductor Science and Technology, Vol. 34, Issue 9
    • DOI: 10.1088/1361-6641/ab3487
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