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Title: Probing electronic structure of stoichiometric and defective Sn O 2

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-97ER45623
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 24; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1364672

Moreno, M. S., Kas, J. J., Ma, C., Wang, F., Rehr, J. J., and Malac, M.. Probing electronic structure of stoichiometric and defective Sn O 2. United States: N. p., Web. doi:10.1103/PhysRevB.95.245206.
Moreno, M. S., Kas, J. J., Ma, C., Wang, F., Rehr, J. J., & Malac, M.. Probing electronic structure of stoichiometric and defective Sn O 2. United States. doi:10.1103/PhysRevB.95.245206.
Moreno, M. S., Kas, J. J., Ma, C., Wang, F., Rehr, J. J., and Malac, M.. 2017. "Probing electronic structure of stoichiometric and defective Sn O 2". United States. doi:10.1103/PhysRevB.95.245206.
@article{osti_1364672,
title = {Probing electronic structure of stoichiometric and defective Sn O 2},
author = {Moreno, M. S. and Kas, J. J. and Ma, C. and Wang, F. and Rehr, J. J. and Malac, M.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.245206},
journal = {Physical Review B},
number = 24,
volume = 95,
place = {United States},
year = {2017},
month = {6}
}

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Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation
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Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts
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