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Title: Compensation of native donor doping in ScN: Carrier concentration control and p -type ScN

Authors:
 [1] ; ORCiD logo [2] ; ORCiD logo [3] ; ORCiD logo [4] ;  [5] ;  [5] ;  [3] ; ORCiD logo [2] ;  [6]
  1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  2. Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linko¨ping University, SE-581 83 Linko¨ping, Sweden
  3. Instituto de Microelectrónica de Madrid, IMM-CMM-CSIC, C/Isaac Newton 8, Tres Cantos, 28760 Madrid, Spain
  4. Karlsruhe Institute of Technology, Institute of Nanotechnology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany, Joint Research Laboratory Nanomaterials (KIT and TUD) at Technische Universität Darmstadt (TUD), Jovanka-Bontschits-Str. 2, D-64287 Darmstadt, Germany
  5. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
  6. Bradley Department of Electrical and Computer Engineering and Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA
Publication Date:
Grant/Contract Number:
CBET-1048616
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 110 Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1364668