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Title: Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [1]
  1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 USA
  2. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115 USA
  3. Physical Sciences Department, Rhode Island College, Providence, Rhode Island 02908 USA
Publication Date:
Grant/Contract Number:
FG02-00-ER45841
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 110 Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1364449

Jo, Insun, Mueed, M. A., Pfeiffer, L. N., West, K. W., Baldwin, K. W., Winkler, R., Padmanabhan, Medini, and Shayegan, M.. Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain. United States: N. p., Web. doi:10.1063/1.4984954.
Jo, Insun, Mueed, M. A., Pfeiffer, L. N., West, K. W., Baldwin, K. W., Winkler, R., Padmanabhan, Medini, & Shayegan, M.. Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain. United States. doi:10.1063/1.4984954.
Jo, Insun, Mueed, M. A., Pfeiffer, L. N., West, K. W., Baldwin, K. W., Winkler, R., Padmanabhan, Medini, and Shayegan, M.. 2017. "Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain". United States. doi:10.1063/1.4984954.
@article{osti_1364449,
title = {Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain},
author = {Jo, Insun and Mueed, M. A. and Pfeiffer, L. N. and West, K. W. and Baldwin, K. W. and Winkler, R. and Padmanabhan, Medini and Shayegan, M.},
abstractNote = {},
doi = {10.1063/1.4984954},
journal = {Applied Physics Letters},
number = 25,
volume = 110,
place = {United States},
year = {2017},
month = {6}
}