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Title: π conjugation in the epitaxial Si(111)- 3 × 3 surface: Unconventional “bamboo hat” bonding geometry for Si

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1363715
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 24; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Jiang, Wei, Liu, Zheng, Zhou, Miao, Ni, Xiaojuan, and Liu, Feng. π conjugation in the epitaxial Si(111)- 3 × 3 surface: Unconventional “bamboo hat” bonding geometry for Si. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.241405.
Jiang, Wei, Liu, Zheng, Zhou, Miao, Ni, Xiaojuan, & Liu, Feng. π conjugation in the epitaxial Si(111)- 3 × 3 surface: Unconventional “bamboo hat” bonding geometry for Si. United States. doi:10.1103/PhysRevB.95.241405.
Jiang, Wei, Liu, Zheng, Zhou, Miao, Ni, Xiaojuan, and Liu, Feng. Mon . "π conjugation in the epitaxial Si(111)- 3 × 3 surface: Unconventional “bamboo hat” bonding geometry for Si". United States. doi:10.1103/PhysRevB.95.241405.
@article{osti_1363715,
title = {π conjugation in the epitaxial Si(111)- 3 × 3 surface: Unconventional “bamboo hat” bonding geometry for Si},
author = {Jiang, Wei and Liu, Zheng and Zhou, Miao and Ni, Xiaojuan and Liu, Feng},
abstractNote = {},
doi = {10.1103/PhysRevB.95.241405},
journal = {Physical Review B},
number = 24,
volume = 95,
place = {United States},
year = {2017},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.95.241405

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