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Title: Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [1]
  1. Univ. of Cadiz (Spain)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Lancaster Univ. (United Kingdom); Univ. Putra Malaysia (Malaysia)
  4. Lancaster Univ. (United Kingdom)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Applied Surface Science
Additional Journal Information:
Journal Volume: 395; Journal ID: ISSN 0169-4332
Publisher:
Elsevier
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1362248
Alternate Identifier(s):
OSTI ID: 1416035

Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I.. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. United States: N. p., Web. doi:10.1016/j.apsusc.2016.04.131.
Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., & Molina, S. I.. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. United States. doi:10.1016/j.apsusc.2016.04.131.
Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I.. 2016. "Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots". United States. doi:10.1016/j.apsusc.2016.04.131. https://www.osti.gov/servlets/purl/1362248.
@article{osti_1362248,
title = {Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots},
author = {Fernandez-Delgado, N. and Herrera, M. and Chisholm, M. F. and Kamarudin, M. A. and Zhuang, Q. D. and Hayne, M. and Molina, S. I.},
abstractNote = {The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.},
doi = {10.1016/j.apsusc.2016.04.131},
journal = {Applied Surface Science},
number = ,
volume = 395,
place = {United States},
year = {2016},
month = {4}
}