Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

Fernandez-Delgado, N.; Herrera, M.; Chisholm, M. F.; Kamarudin, M. A.; Zhuang, Q. D.; Hayne, M.; Molina, S. I.

doi:10.1016/j.apsusc.2016.04.131

Title: Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

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Abstract

The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

Authors:

Fernandez-Delgado, N. ^[1]; Herrera, M. ^[1]; Chisholm, M. F. ^[2]; Kamarudin, M. A. ^[3]; Zhuang, Q. D. ^[4]; Hayne, M. ^[4]; Molina, S. I. ^[1]

Univ. of Cadiz (Spain)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Lancaster Univ. (United Kingdom); Univ. Putra Malaysia (Malaysia)
Lancaster Univ. (United Kingdom)

Publication Date:: 2016-04-22

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1362248

Alternate Identifier(s):: OSTI ID: 1416035

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Applied Surface Science

Additional Journal Information:: Journal Volume: 395; Journal ID: ISSN 0169-4332

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots.  United States: N. p., 2016. 
Web.  doi:10.1016/j.apsusc.2016.04.131.

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                    Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., & Molina, S. I. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots.  United States.  https://doi.org/10.1016/j.apsusc.2016.04.131

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                    Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I. Fri .  
"Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots".  United States.  https://doi.org/10.1016/j.apsusc.2016.04.131.  https://www.osti.gov/servlets/purl/1362248.

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@article{osti_1362248,

  title        = {Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots},

  author       = {Fernandez-Delgado, N. and Herrera, M. and Chisholm, M. F. and Kamarudin, M. A. and Zhuang, Q. D. and Hayne, M. and Molina, S. I.},

  abstractNote = {The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.},

  doi          = {10.1016/j.apsusc.2016.04.131},

  journal      = {Applied Surface Science},

  number       = ,

  volume       = 395,

  place        = {United States},

  year         = {2016},

  month        = {4}

}

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