Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.
- Authors:
-
[1]
; [1]
; [2]
; [3]
; [4]
; [4]
; [1]
- Univ. of Cadiz (Spain)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Lancaster Univ. (United Kingdom); Univ. Putra Malaysia (Malaysia)
- Lancaster Univ. (United Kingdom)
- Publication Date:
- Grant/Contract Number:
- AC05-00OR22725
- Type:
- Accepted Manuscript
- Journal Name:
- Applied Surface Science
- Additional Journal Information:
- Journal Volume: 395; Journal ID: ISSN 0169-4332
- Publisher:
- Elsevier
- Research Org:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org:
- USDOE Office of Science (SC)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
- OSTI Identifier:
- 1362248
- Alternate Identifier(s):
- OSTI ID: 1416035
Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I.. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. United States: N. p.,
Web. doi:10.1016/j.apsusc.2016.04.131.
Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., & Molina, S. I.. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. United States. doi:10.1016/j.apsusc.2016.04.131.
Fernandez-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I.. 2016.
"Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots". United States.
doi:10.1016/j.apsusc.2016.04.131. https://www.osti.gov/servlets/purl/1362248.
@article{osti_1362248,
title = {Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots},
author = {Fernandez-Delgado, N. and Herrera, M. and Chisholm, M. F. and Kamarudin, M. A. and Zhuang, Q. D. and Hayne, M. and Molina, S. I.},
abstractNote = {The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.},
doi = {10.1016/j.apsusc.2016.04.131},
journal = {Applied Surface Science},
number = ,
volume = 395,
place = {United States},
year = {2016},
month = {4}
}
- Free Publicly Accessible Full Text
- Accepted Manuscript (Publisher)
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1016/j.apsusc.2016.04.131