Quantum Memristors with Superconducting Circuits
Abstract
Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. Here in this paper, for realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.
- Authors:
-
- Yale Univ., New Haven, CT (United States). Dept. of Physics; Univ. of the Basque Country, Donostia (Spain). Dept. of Physical Chemistry; Aalto Univ., Otaniemi (Finland). QCD Labs, COMP Centre of Excellence, Dept. of Applied Physics
- Bavarian Academy of Sciences and Humanities, Garching (Germany). Walther-MeiBner-Inst.; Technische Univ. Munich (Germany). Physics Dept.; Nanosystems Initiative Munich (NIM), Munich (Germany)
- Univ. of California, San Diego, CA (United States). Dept. of Physics
- Univ. of the Basque Country, Donostia (Spain). Dept. of Physical Chemistry
- Univ. of the Basque Country, Donostia (Spain). Dept. of Physical Chemistry; Ikerbasque, Basque Foundation for Science, Bilbao (Spain)
- Publication Date:
- Research Org.:
- Univ. of California, San Diego, CA (United States)
- Sponsoring Org.:
- USDOE; Finnish Cultural Foundation; Basque Government; European Union (EU)
- OSTI Identifier:
- 1362034
- Grant/Contract Number:
- FG02-05ER46204; IT986-16; IS2015-69983-P
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 7; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 97 MATHEMATICS AND COMPUTING; Quantum information; Superconducting devices
Citation Formats
Salmilehto, J., Deppe, F., Di Ventra, M., Sanz, M., and Solano, E. Quantum Memristors with Superconducting Circuits. United States: N. p., 2017.
Web. doi:10.1038/srep42044.
Salmilehto, J., Deppe, F., Di Ventra, M., Sanz, M., & Solano, E. Quantum Memristors with Superconducting Circuits. United States. https://doi.org/10.1038/srep42044
Salmilehto, J., Deppe, F., Di Ventra, M., Sanz, M., and Solano, E. Tue .
"Quantum Memristors with Superconducting Circuits". United States. https://doi.org/10.1038/srep42044. https://www.osti.gov/servlets/purl/1362034.
@article{osti_1362034,
title = {Quantum Memristors with Superconducting Circuits},
author = {Salmilehto, J. and Deppe, F. and Di Ventra, M. and Sanz, M. and Solano, E.},
abstractNote = {Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. Here in this paper, for realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.},
doi = {10.1038/srep42044},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {Tue Feb 14 00:00:00 EST 2017},
month = {Tue Feb 14 00:00:00 EST 2017}
}
Web of Science
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