Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors
Abstract
The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for semiconductor composites with a wide range of potential optical, electrical, and thermal properties, making them useful for applications in thermoelectrics, tunnel junctions, phototconductive switches, and as contact layers. The similarities in crystal structures and lattice constants allow them to be epitaxially incorporated into III-V semiconductors with low defect densities and high overall film quality. A variety of growth techniques for these composites with be discussed, along with their growth mechanisms and current applications, with a focus on more recent developments. Results obtained from molecular beam epitaxy film growth will be highlighted, although other growth techniques will be mentioned. Optical and electronic characterization along with the microscopy analysis of these composites is presented to demonstrate influence of nanoinclusion composition and morphology on the resulting properties of the composite material.
- Authors:
-
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 and Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
- Publication Date:
- Research Org.:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1361937
- Alternate Identifier(s):
- OSTI ID: 1420592; OSTI ID: 1426156
- Grant/Contract Number:
- SC0008166; SC0008466; NNX15AI19H
- Resource Type:
- Published Article
- Journal Name:
- Journal of Vacuum Science and Technology B
- Additional Journal Information:
- Journal Name: Journal of Vacuum Science and Technology B Journal Volume: 35 Journal Issue: 3; Journal ID: ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIP
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Bomberger, Cory C., Lewis, Matthew R., Vanderhoef, Laura R., Doty, Matthew F., and Zide, Joshua M. O. Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors. United States: N. p., 2017.
Web. doi:10.1116/1.4979347.
Bomberger, Cory C., Lewis, Matthew R., Vanderhoef, Laura R., Doty, Matthew F., & Zide, Joshua M. O. Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors. United States. https://doi.org/10.1116/1.4979347
Bomberger, Cory C., Lewis, Matthew R., Vanderhoef, Laura R., Doty, Matthew F., and Zide, Joshua M. O. Thu .
"Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors". United States. https://doi.org/10.1116/1.4979347.
@article{osti_1361937,
title = {Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors},
author = {Bomberger, Cory C. and Lewis, Matthew R. and Vanderhoef, Laura R. and Doty, Matthew F. and Zide, Joshua M. O.},
abstractNote = {The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for semiconductor composites with a wide range of potential optical, electrical, and thermal properties, making them useful for applications in thermoelectrics, tunnel junctions, phototconductive switches, and as contact layers. The similarities in crystal structures and lattice constants allow them to be epitaxially incorporated into III-V semiconductors with low defect densities and high overall film quality. A variety of growth techniques for these composites with be discussed, along with their growth mechanisms and current applications, with a focus on more recent developments. Results obtained from molecular beam epitaxy film growth will be highlighted, although other growth techniques will be mentioned. Optical and electronic characterization along with the microscopy analysis of these composites is presented to demonstrate influence of nanoinclusion composition and morphology on the resulting properties of the composite material.},
doi = {10.1116/1.4979347},
journal = {Journal of Vacuum Science and Technology B},
number = 3,
volume = 35,
place = {United States},
year = {Thu Mar 30 00:00:00 EDT 2017},
month = {Thu Mar 30 00:00:00 EDT 2017}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1116/1.4979347
https://doi.org/10.1116/1.4979347
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 20 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referencing / citing this record:
High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material
journal, February 2019
- Tew, Bo E.; Vempati, Pratyusha; Clinger, Laura E.
- Advanced Electronic Materials, Vol. 5, Issue 4
Growth and Thermal Characterization of TbAs Nanoparticles Grown by Inert Gas Condensation
journal, October 2019
- Tew, Bo E.; Zhang, Yuying; Shahid, Areej
- Journal of Electronic Materials, Vol. 49, Issue 1
Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials
journal, June 2018
- Saha, Bivas; Shakouri, Ali; Sands, Timothy D.
- Applied Physics Reviews, Vol. 5, Issue 2
Size dependent arsenic volatilization in ErAs nanoparticle powders
journal, October 2018
- Lewis, Matthew R.; Remy, Roddel A.; Tew, Bo E.
- Applied Physics Letters, Vol. 113, Issue 16
Simulating nanoisland layers in THz detectors using a Monte Carlo method
journal, January 2019
- Gagnon, Etienne; Lytle, Amy; Jabbour, Charles
- Journal of Applied Physics, Vol. 125, Issue 3