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Title: Effect of oxygen vacancies and strain on the phonon spectrum of HfO 2 thin films

Authors:
 [1] ; ORCiD logo [2] ;  [3] ;  [2] ;  [3] ; ORCiD logo [4] ;  [1]
  1. Department of Physics, The University of Texas, Austin, Texas 78712, USA
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  3. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  4. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA, Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Publication Date:
Grant/Contract Number:
DESC0008877
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 121 Journal Issue: 22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1361920

Gao, Lingyuan, Yalon, Eilam, Chew, Annabel R., Deshmukh, Sanchit, Salleo, Alberto, Pop, Eric, and Demkov, Alexander A.. Effect of oxygen vacancies and strain on the phonon spectrum of HfO 2 thin films. United States: N. p., Web. doi:10.1063/1.4984833.
Gao, Lingyuan, Yalon, Eilam, Chew, Annabel R., Deshmukh, Sanchit, Salleo, Alberto, Pop, Eric, & Demkov, Alexander A.. Effect of oxygen vacancies and strain on the phonon spectrum of HfO 2 thin films. United States. doi:10.1063/1.4984833.
Gao, Lingyuan, Yalon, Eilam, Chew, Annabel R., Deshmukh, Sanchit, Salleo, Alberto, Pop, Eric, and Demkov, Alexander A.. 2017. "Effect of oxygen vacancies and strain on the phonon spectrum of HfO 2 thin films". United States. doi:10.1063/1.4984833.
@article{osti_1361920,
title = {Effect of oxygen vacancies and strain on the phonon spectrum of HfO 2 thin films},
author = {Gao, Lingyuan and Yalon, Eilam and Chew, Annabel R. and Deshmukh, Sanchit and Salleo, Alberto and Pop, Eric and Demkov, Alexander A.},
abstractNote = {},
doi = {10.1063/1.4984833},
journal = {Journal of Applied Physics},
number = 22,
volume = 121,
place = {United States},
year = {2017},
month = {6}
}

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Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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High dielectric constant oxides
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  • Robertson, J.
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