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Title: Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1]
  1. Arizona State University, Electrical Engineering, P.O. Box 875706 Tempe, Arizona 85287-5706, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1361909
Grant/Contract Number:  
EEC-1041895
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 121 Journal Issue: 20; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Augusto, André, Herasimenka, Stanislau Y., King, Richard R., Bowden, Stuart G., and Honsberg, Christiana. Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset. United States: N. p., 2017. Web. doi:10.1063/1.4984071.
Augusto, André, Herasimenka, Stanislau Y., King, Richard R., Bowden, Stuart G., & Honsberg, Christiana. Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset. United States. doi:10.1063/1.4984071.
Augusto, André, Herasimenka, Stanislau Y., King, Richard R., Bowden, Stuart G., and Honsberg, Christiana. Sun . "Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset". United States. doi:10.1063/1.4984071.
@article{osti_1361909,
title = {Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset},
author = {Augusto, André and Herasimenka, Stanislau Y. and King, Richard R. and Bowden, Stuart G. and Honsberg, Christiana},
abstractNote = {},
doi = {10.1063/1.4984071},
journal = {Journal of Applied Physics},
number = 20,
volume = 121,
place = {United States},
year = {2017},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4984071

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