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Title: On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max. Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.
Authors:
 [1] ;  [1] ; ORCiD logo [1] ;  [2] ; ORCiD logo [3] ;  [4] ;  [5] ;  [3] ;  [1]
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Texas-Dallas, Richardson, TX (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Univ. of Wisconsin, Madison, WI (United States); Univ. of Pennsylvania, Philadelphia, PA (United States)
  5. Freescale Semiconductor, Inc., Chandler, AZ (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Published Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 7; Journal Issue: 3; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
U.S. Department of Defense (DOD), Defense Advanced Research Projects Agency (DARPA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1361805
Alternate Identifier(s):
OSTI ID: 1360136; OSTI ID: 1421014

Mi, Hongyi, Yuan, Hao -Chih, Seo, Jung -Hun, Auciello, Orlando H., Mancini, Derrick C., Carpick, Robert W., Pacheco, Sergio P., Sumant, Anirudha V., and Ma, Zhenqiang. On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip. United States: N. p., Web. doi:10.1063/1.4979480.
Mi, Hongyi, Yuan, Hao -Chih, Seo, Jung -Hun, Auciello, Orlando H., Mancini, Derrick C., Carpick, Robert W., Pacheco, Sergio P., Sumant, Anirudha V., & Ma, Zhenqiang. On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip. United States. doi:10.1063/1.4979480.
Mi, Hongyi, Yuan, Hao -Chih, Seo, Jung -Hun, Auciello, Orlando H., Mancini, Derrick C., Carpick, Robert W., Pacheco, Sergio P., Sumant, Anirudha V., and Ma, Zhenqiang. 2017. "On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip". United States. doi:10.1063/1.4979480.
@article{osti_1361805,
title = {On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip},
author = {Mi, Hongyi and Yuan, Hao -Chih and Seo, Jung -Hun and Auciello, Orlando H. and Mancini, Derrick C. and Carpick, Robert W. and Pacheco, Sergio P. and Sumant, Anirudha V. and Ma, Zhenqiang},
abstractNote = {A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.},
doi = {10.1063/1.4979480},
journal = {AIP Advances},
number = 3,
volume = 7,
place = {United States},
year = {2017},
month = {3}
}