H + ion-induced damage and etching of multilayer graphene in H 2 plasmas
- Authors:
-
- Univ. Grenoble Alpes, CNRS, CEA-Leti Minatec, LTM, 38054 Grenoble Cedex, France
- Department of Chemical Engineering, University of California at Berkeley, Berkeley, California 94720, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1361793
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 121 Journal Issue: 13; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Davydova, A., Despiau-Pujo, E., Cunge, G., and Graves, D. B. H + ion-induced damage and etching of multilayer graphene in H 2 plasmas. United States: N. p., 2017.
Web. doi:10.1063/1.4979023.
Davydova, A., Despiau-Pujo, E., Cunge, G., & Graves, D. B. H + ion-induced damage and etching of multilayer graphene in H 2 plasmas. United States. https://doi.org/10.1063/1.4979023
Davydova, A., Despiau-Pujo, E., Cunge, G., and Graves, D. B. Fri .
"H + ion-induced damage and etching of multilayer graphene in H 2 plasmas". United States. https://doi.org/10.1063/1.4979023.
@article{osti_1361793,
title = {H + ion-induced damage and etching of multilayer graphene in H 2 plasmas},
author = {Davydova, A. and Despiau-Pujo, E. and Cunge, G. and Graves, D. B.},
abstractNote = {},
doi = {10.1063/1.4979023},
journal = {Journal of Applied Physics},
number = 13,
volume = 121,
place = {United States},
year = {Fri Apr 07 00:00:00 EDT 2017},
month = {Fri Apr 07 00:00:00 EDT 2017}
}
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https://doi.org/10.1063/1.4979023
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Cited by: 12 works
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