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Title: H + ion-induced damage and etching of multilayer graphene in H 2 plasmas

Authors:
 [1];  [1];  [1];  [2]
  1. Univ. Grenoble Alpes, CNRS, CEA-Leti Minatec, LTM, 38054 Grenoble Cedex, France
  2. Department of Chemical Engineering, University of California at Berkeley, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1361793
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 121 Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Davydova, A., Despiau-Pujo, E., Cunge, G., and Graves, D. B. H + ion-induced damage and etching of multilayer graphene in H 2 plasmas. United States: N. p., 2017. Web. doi:10.1063/1.4979023.
Davydova, A., Despiau-Pujo, E., Cunge, G., & Graves, D. B. H + ion-induced damage and etching of multilayer graphene in H 2 plasmas. United States. doi:10.1063/1.4979023.
Davydova, A., Despiau-Pujo, E., Cunge, G., and Graves, D. B. Fri . "H + ion-induced damage and etching of multilayer graphene in H 2 plasmas". United States. doi:10.1063/1.4979023.
@article{osti_1361793,
title = {H + ion-induced damage and etching of multilayer graphene in H 2 plasmas},
author = {Davydova, A. and Despiau-Pujo, E. and Cunge, G. and Graves, D. B.},
abstractNote = {},
doi = {10.1063/1.4979023},
journal = {Journal of Applied Physics},
number = 13,
volume = 121,
place = {United States},
year = {2017},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4979023

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