Shot noise detection in hBN-based tunnel junctions
Abstract
High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kX/lm2. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise shows consistency with theoretical expectations. Furthermore, these results show that atomically thin hBN is an excellent tunnel barrier, especially for the study of shot noise properties, and this can enable the study of the tunneling density of states and shot noise spectroscopy in more complex systems.
- Authors:
-
- Rice Univ., Houston, TX (United States)
- National Institute for Materials Science, Ibaraki (Japan)
- Publication Date:
- Research Org.:
- William Marsh Rice Univ., Houston, TX (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1466026
- Alternate Identifier(s):
- OSTI ID: 1361788
- Grant/Contract Number:
- FG02-06ER46337
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 13; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Zhou, Panpan, Hardy, Will J., Watanabe, Kenji, Taniguchi, Takashi, and Natelson, Douglas. Shot noise detection in hBN-based tunnel junctions. United States: N. p., 2017.
Web. doi:10.1063/1.4978693.
Zhou, Panpan, Hardy, Will J., Watanabe, Kenji, Taniguchi, Takashi, & Natelson, Douglas. Shot noise detection in hBN-based tunnel junctions. United States. https://doi.org/10.1063/1.4978693
Zhou, Panpan, Hardy, Will J., Watanabe, Kenji, Taniguchi, Takashi, and Natelson, Douglas. Mon .
"Shot noise detection in hBN-based tunnel junctions". United States. https://doi.org/10.1063/1.4978693. https://www.osti.gov/servlets/purl/1466026.
@article{osti_1466026,
title = {Shot noise detection in hBN-based tunnel junctions},
author = {Zhou, Panpan and Hardy, Will J. and Watanabe, Kenji and Taniguchi, Takashi and Natelson, Douglas},
abstractNote = {High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kX/lm2. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise shows consistency with theoretical expectations. Furthermore, these results show that atomically thin hBN is an excellent tunnel barrier, especially for the study of shot noise properties, and this can enable the study of the tunneling density of states and shot noise spectroscopy in more complex systems.},
doi = {10.1063/1.4978693},
journal = {Applied Physics Letters},
number = 13,
volume = 110,
place = {United States},
year = {Mon Mar 27 00:00:00 EDT 2017},
month = {Mon Mar 27 00:00:00 EDT 2017}
}
Web of Science
Works referenced in this record:
Detection of Vibration-Mode Scattering in Electronic Shot Noise
journal, April 2012
- Kumar, Manohar; Avriller, Rémi; Yeyati, Alfredo Levy
- Physical Review Letters, Vol. 108, Issue 14
Doubled shot noise in disordered normal-metal–superconductor junctions
journal, June 1994
- de Jong, M. J. M.; Beenakker, C. W. J.
- Physical Review B, Vol. 49, Issue 22
Detection of doubled shot noise in short normal-metal/ superconductor junctions
journal, May 2000
- Jehl, X.; Sanquer, M.; Calemczuk, R.
- Nature, Vol. 405, Issue 6782
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
journal, February 2012
- Britnell, Liam; Gorbachev, Roman V.; Jalil, Rashid
- Nano Letters, Vol. 12, Issue 3
Setup for shot noise measurements in carbon nanotubes
conference, January 2006
- Wu, Fan; Roschier, Leif; Tsuneta, Taku
- LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24, AIP Conference Proceedings
Primary Electronic Thermometry Using the Shot Noise of a Tunnel Junction
journal, June 2003
- Spietz, L.
- Science, Vol. 300, Issue 5627
Flexible and Transparent MoS 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
journal, August 2013
- Lee, Gwan-Hyoung; Yu, Young-Jun; Cui, Xu
- ACS Nano, Vol. 7, Issue 9
Observation of the Fractionally Charged Laughlin Quasiparticle
journal, September 1997
- Saminadayar, L.; Glattli, D. C.; Jin, Y.
- Physical Review Letters, Vol. 79, Issue 13
Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy
journal, November 2015
- Jung, Suyong; Park, Minkyu; Park, Jaesung
- Scientific Reports, Vol. 5, Issue 1
Fluctuation phenomena in tunnel junctions
journal, July 1974
- Rogovin, D.; Scalapino, D. J.
- Annals of Physics, Vol. 86, Issue 1
Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers
journal, March 2016
- Piquemal-Banci, M.; Galceran, R.; Caneva, S.
- Applied Physics Letters, Vol. 108, Issue 10
Phonon-Mediated versus Coulombic Backaction in Quantum Dot Circuits
journal, May 2010
- Harbusch, D.; Taubert, D.; Tranitz, H. P.
- Physical Review Letters, Vol. 104, Issue 19
Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions
journal, October 2015
- Chandni, U.; Watanabe, K.; Taniguchi, T.
- Nano Letters, Vol. 15, Issue 11
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
journal, September 2014
- Mishchenko, A.; Tu, J. S.; Cao, Y.
- Nature Nanotechnology, Vol. 9, Issue 10
Noise characteristics of sequential tunneling through double-barrier junctions
journal, August 1992
- Chen, L. Y.; Ting, C. S.
- Physical Review B, Vol. 46, Issue 8
One-Dimensional Electrical Contact to a Two-Dimensional Material
journal, October 2013
- Wang, L.; Meric, I.; Huang, P. Y.
- Science, Vol. 342, Issue 6158
Temporal Correlation of Electrons: Suppression of Shot Noise in a Ballistic Quantum Point Contact
journal, October 1995
- Reznikov, M.; Heiblum, M.; Shtrikman, Hadas
- Physical Review Letters, Vol. 75, Issue 18
Tunneling spectroscopy of graphene-boron-nitride heterostructures
journal, February 2012
- Amet, F.; Williams, J. R.; Garcia, A. G. F.
- Physical Review B, Vol. 85, Issue 7
Resonant tunnelling and negative differential conductance in graphene transistors
journal, April 2013
- Britnell, L.; Gorbachev, R. V.; Geim, A. K.
- Nature Communications, Vol. 4, Issue 1
Direct observation of a fractional charge
journal, June 1998
- de-Picciotto, R.; Reznikov, M.; Heiblum, M.
- Physica B: Condensed Matter, Vol. 249-251
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012
- Britnell, L.; Gorbachev, R. V.; Jalil, R.
- Science, Vol. 335, Issue 6071
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
journal, May 2009
- Li, X.; Cai, W.; An, J.
- Science, Vol. 324, Issue 5932, p. 1312-1314
Shot Noise Suppression at Room Temperature in Atomic-Scale Au Junctions
journal, April 2010
- Wheeler, P. J.; Russom, J. N.; Evans, K.
- Nano Letters, Vol. 10, Issue 4
Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates
journal, August 2011
- Suk, Ji Won; Kitt, Alexander; Magnuson, Carl W.
- ACS Nano, Vol. 5, Issue 9
Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal–Hexagonal Boron Nitride–Graphene Junctions
journal, December 2016
- Chandni, U.; Watanabe, K.; Taniguchi, T.
- Nano Letters, Vol. 16, Issue 12
Works referencing / citing this record:
Tunneling noise and defects in exfoliated hexagonal boron nitride
journal, October 2019
- Zhao, Xuanhan; Zhou, Panpan; Chen, Liyang
- AIP Advances, Vol. 9, Issue 10
Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement
journal, January 2018
- Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji
- Physical Review B, Vol. 97, Issue 4
Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement
text, January 2018
- Hattori, Y.; Taniguchi, T.; Watanabe, K.
- arXiv