skip to main content

DOE PAGESDOE PAGES

Title: Conduction in In 2O 3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

Thin film In 2O 3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In 2O 3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.
Authors:
 [1] ;  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 4; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Materials Sciences and Engineering Division
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1361785
Alternate Identifier(s):
OSTI ID: 1352920; OSTI ID: 1420716

Veal, B. W., and Eastman, J. A.. Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces. United States: N. p., Web. doi:10.1063/1.4977205.
Veal, B. W., & Eastman, J. A.. Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces. United States. doi:10.1063/1.4977205.
Veal, B. W., and Eastman, J. A.. 2017. "Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces". United States. doi:10.1063/1.4977205.
@article{osti_1361785,
title = {Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces},
author = {Veal, B. W. and Eastman, J. A.},
abstractNote = {Thin film In2O3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In2O3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.},
doi = {10.1063/1.4977205},
journal = {APL Materials},
number = 4,
volume = 5,
place = {United States},
year = {2017},
month = {3}
}