Hydride CVD Hetero-epitaxy of B 12P 2 on 4H-SiC
Icosahedral boron phosphide (B 12P 2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. Our study focused on improving B 12P 2 hetero-epitaxial films by growing on 4H-SiC substrates over the temperature range of 1250–1450 °C using B 2H 6 and PH 3 precursors in a H 2 carrier gas. Furthermore, XRD scans and Laue transmission photographs revealed that the epitaxial relationship was (0001)<11$$\bar{2}$$0> B12P2|| (0001)<11$$\bar{2}$$0> 4H-SiC. The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 °C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 °C, films were continuous and comparatively smooth (R RMS≤7 nm). At 1400 or 1450 °C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 °C was the optimum growth temperature tested. Finally, at 1300 °C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 µm thick film, suggesting a reduction in defects with thickness.
- Authors:
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[1]
; [2]
; [3]
; [2]
; [3]
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
- Publication Date:
- Report Number(s):
- LLNL-JRNL-696569
Journal ID: ISSN 0022-0248
- Grant/Contract Number:
- AC52-07NA27344; SC0005156
- Type:
- Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Volume: 459; Journal Issue: C; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Research Org:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; A3. Chemical vapor deposition processes; A3. Hydride vapor phase epitaxy; B1. Borides; B2. Semiconducting boride compounds
- OSTI Identifier:
- 1361605
- Alternate Identifier(s):
- OSTI ID: 1396711
- Free Publicly Accessible Full Text
- Accepted Manuscript (Publisher)
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1016/j.jcrysgro.2016.11.101