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Title: Hydride CVD Hetero-epitaxy of B 12P 2 on 4H-SiC

Icosahedral boron phosphide (B 12P 2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. Our study focused on improving B 12P 2 hetero-epitaxial films by growing on 4H-SiC substrates over the temperature range of 1250–1450 °C using B 2H 6 and PH 3 precursors in a H 2 carrier gas. Furthermore, XRD scans and Laue transmission photographs revealed that the epitaxial relationship was (0001)<11$$\bar{2}$$0> B12P2|| (0001)<11$$\bar{2}$$0> 4H-SiC. The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 °C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 °C, films were continuous and comparatively smooth (R RMS≤7 nm). At 1400 or 1450 °C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 °C was the optimum growth temperature tested. Finally, at 1300 °C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 µm thick film, suggesting a reduction in defects with thickness.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [3]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
Publication Date:
Report Number(s):
LLNL-JRNL-696569
Journal ID: ISSN 0022-0248
Grant/Contract Number:
AC52-07NA27344; SC0005156
Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 459; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; A3. Chemical vapor deposition processes; A3. Hydride vapor phase epitaxy; B1. Borides; B2. Semiconducting boride compounds
OSTI Identifier:
1361605
Alternate Identifier(s):
OSTI ID: 1396711