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Title: Coulomb engineering of the bandgap and excitons in two-dimensional materials

Here, the ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS 2 and WSe 2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution.
 [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [4] ;  [5] ;  [6] ;  [6] ;  [6] ; ORCiD logo [3] ;  [3] ;  [3] ;  [1] ;  [3] ;  [7]
  1. Columbia Univ., New York, NY (United States); Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  2. Columbia Univ., New York, NY (United States); Univ. Federal do Ceara, Fortaleza (Brazil)
  3. Columbia Univ., New York, NY (United States)
  4. Columbia Univ., New York, NY (United States); Stanford Univ., Stanford, CA (United States)
  5. Univ. of Chicago, Chicago, IL (United States)
  6. Univ. of Regensburg, Regensburg (Germany)
  7. Columbia Univ., New York, NY (United States); Univ. of Regensburg, Regensburg (Germany)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Nature Publishing Group
Research Org:
SLAC National Accelerator Lab. (SLAC), Menlo Park, CA (United States)
Sponsoring Org:
Country of Publication:
United States
36 MATERIALS SCIENCE; electronic properties and materials; two-dimensional materials
OSTI Identifier: