Coulomb engineering of the bandgap and excitons in two-dimensional materials
Abstract
Here, the ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution.
- Authors:
-
- Columbia Univ., New York, NY (United States); Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Columbia Univ., New York, NY (United States); Univ. Federal do Ceara, Fortaleza (Brazil)
- Columbia Univ., New York, NY (United States)
- Columbia Univ., New York, NY (United States); Stanford Univ., Stanford, CA (United States)
- Univ. of Chicago, Chicago, IL (United States)
- Univ. of Regensburg, Regensburg (Germany)
- Columbia Univ., New York, NY (United States); Univ. of Regensburg, Regensburg (Germany)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab. (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1360901
- Grant/Contract Number:
- AC02-76SF00515
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 8; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; electronic properties and materials; two-dimensional materials
Citation Formats
Raja, Archana, Chaves, Andrey, Yu, Jaeeun, Arefe, Ghidewon, Hill, Heather M., Rigosi, Albert F., Berkelbach, Timothy C., Nagler, Philipp, Schuller, Christian, Korn, Tobias, Nuckolls, Colin, Hone, James, Brus, Louis E., Heinz, Tony F., Reichman, David R., and Chernikov, Alexey. Coulomb engineering of the bandgap and excitons in two-dimensional materials. United States: N. p., 2017.
Web. doi:10.1038/ncomms15251.
Raja, Archana, Chaves, Andrey, Yu, Jaeeun, Arefe, Ghidewon, Hill, Heather M., Rigosi, Albert F., Berkelbach, Timothy C., Nagler, Philipp, Schuller, Christian, Korn, Tobias, Nuckolls, Colin, Hone, James, Brus, Louis E., Heinz, Tony F., Reichman, David R., & Chernikov, Alexey. Coulomb engineering of the bandgap and excitons in two-dimensional materials. United States. https://doi.org/10.1038/ncomms15251
Raja, Archana, Chaves, Andrey, Yu, Jaeeun, Arefe, Ghidewon, Hill, Heather M., Rigosi, Albert F., Berkelbach, Timothy C., Nagler, Philipp, Schuller, Christian, Korn, Tobias, Nuckolls, Colin, Hone, James, Brus, Louis E., Heinz, Tony F., Reichman, David R., and Chernikov, Alexey. Thu .
"Coulomb engineering of the bandgap and excitons in two-dimensional materials". United States. https://doi.org/10.1038/ncomms15251. https://www.osti.gov/servlets/purl/1360901.
@article{osti_1360901,
title = {Coulomb engineering of the bandgap and excitons in two-dimensional materials},
author = {Raja, Archana and Chaves, Andrey and Yu, Jaeeun and Arefe, Ghidewon and Hill, Heather M. and Rigosi, Albert F. and Berkelbach, Timothy C. and Nagler, Philipp and Schuller, Christian and Korn, Tobias and Nuckolls, Colin and Hone, James and Brus, Louis E. and Heinz, Tony F. and Reichman, David R. and Chernikov, Alexey},
abstractNote = {Here, the ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution.},
doi = {10.1038/ncomms15251},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {Thu May 04 00:00:00 EDT 2017},
month = {Thu May 04 00:00:00 EDT 2017}
}
Web of Science
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Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials
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Impact of photodoping on inter- and intralayer exciton emission in a MoS 2 /MoSe 2 /MoS 2 heterostructure
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Charged excitons in two-dimensional transition metal dichalcogenides: Semiclassical calculation of Berry curvature effects
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Exciton routing in the heterostructure of a transition metal dichalcogenide monolayer on a paraelectric substrate
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Noninvasive control of excitons in two-dimensional materials
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Environmentally sensitive theory of electronic and optical transitions in atomically thin semiconductors
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Radiative lifetime of localized excitons in transition-metal dichalcogenides
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Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening
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Photocarrier generation from interlayer charge-transfer transitions in WS 2 -graphene heterostructures
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Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
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Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures
text, January 2018
- Kunstmann, Jens; Mooshammer, Fabian; Nagler, Philipp
- Universität Regensburg
Exciton broadening in WS2 /graphene heterostructures
text, January 2017
- Hill, Heather M.; Rigosi, Albert F.; Raja, Archana
- Universität Regensburg
Reliable Synthesis of Large-Area Monolayer WS 2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation
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Facile synthesis of thin black TiO2 − x nanosheets with enhanced lithium-storage capacity and visible light photocatalytic hydrogen production
journal, January 2019
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Visualizing electrostatic gating effects in two-dimensional heterostructures
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Polariton hyperspectral imaging of two-dimensional semiconductor crystals
journal, September 2019
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Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe 2 monolayer
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Probing interlayer excitons in a vertical van der Waals p-n junction using a scanning probe microscopy technique
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Comparative study of the exciton binding energies of thin and ultrathin organic-inorganic perovskites due to dielectric mismatch effects
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Polariton hyperspectral imaging of two-dimensional semiconductor crystals
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Experimental observation of a negative grey trion in an electron-rich WSe 2 monolayer
text, January 2019
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- RWTH Aachen University
Dynamical screening in monolayer transition-metal dichalcogenides and its manifestations in the exciton spectrum
text, January 2018
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Singlet and triplet trions in WS$_2$ monolayer encapsulated in hexagonal boron nitride
text, January 2018
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Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures
text, January 2018
- Kunstmann, Jens; Mooshammer, Fabian; Nagler, Philipp
- arXiv
Radiative lifetime of localized excitons in transition metal dichalcogenides
text, January 2018
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- arXiv
Two-dimensional semiconductors in the regime of strong light-matter coupling
text, January 2018
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- arXiv
Charged exctions in two-dimensional transition-metal dichalcogenides - semiclassical calculation of Berry-curvature effects
text, January 2018
- Hichri, A.; Jaziri, S.; Goerbig, M. O.
- arXiv
Imaging microscopic electronic contrasts at the interface of single-layer WS$_2$ with oxide and boron nitride substrates
text, January 2019
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- arXiv
Intrinsic Lifetime of Higher Excitonic States in Tungsten Diselenide Monolayers
text, January 2019
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- arXiv
Gate-tunable flat bands in van der Waals patterned dielectric superlattices
text, January 2019
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Dependence of the magnetic interactions in MoS$_2$ monolayer on Mn-doping configurations
text, January 2019
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Morphology Control of Epitaxial Monolayer Transition Metal Dichalcogenides
text, January 2019
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- arXiv
Ultra-thin van der Waals crystals as semiconductor quantum wells
text, January 2019
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- arXiv
The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus
text, January 2020
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- arXiv
Colloquium : Excitons in atomically thin transition metal dichalcogenides
text, January 2018
- Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.
- Universität Regensburg