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Title: Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy

Quaternary GaInAsP solar cells with a bandgap of ~1.7 eV offer an attractive Al-free alternative to AlGaAs solar cells for integration in next generation of III-V multijunction solar cells with five or more junctions. Development of a high quality 1.7 eV solar cell is also highly sought for III-V/Si tandem solar cells. In this work, we systematically investigate the impact of varying base thicknesses and doping concentrations on the carrier collection and performance of 1.7 eV GaInAsP solar cells. The photoresponse of these cells is found to be very sensitive to p-type zinc doping concentration in the base layer. Prototype 1.7 eV GaInAsP n-i-p solar cell designs are demonstrated that leverage enhanced depletion width as an effective method to achieve peak quantum efficiency exceeding 90%. We also show the importance of optimal i-layer thickness as a critical parameter to reduce the drop in fill-factor (FF) due to field-aided collection. Furthermore, we demonstrate substantial improvement in the cell performance when the GaInAsP base layer is grown at 650 degrees C instead of 600 degrees C. The best GaInAsP solar cell (Eg ~ 1.65 eV) in this study achieved JSC of 21.1 mA/cm 2, VOC of 1.18 V, FF of 83.8%, andmore » an efficiency of 20.8 +/- 1% under AM1.5D spectrum (21.5 +/- 1% under AM1.5G spectrum). Finally, these results highlight the potential of Al-free GaInAsP solar cells for integration in the next generation of III-V multijunction solar cells.« less
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-68174
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 3; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; III-V semiconductor materials; heterjunctions; multijunction solar cells; photovoltaic cells; semiconductor epitaxial layers
OSTI Identifier:
1360894

Jain, Nikhil, Geisz, John F., France, Ryan M., Norman, Andrew G., and Steiner, Myles A.. Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy. United States: N. p., Web. doi:10.1109/JPHOTOV.2017.2655035.
Jain, Nikhil, Geisz, John F., France, Ryan M., Norman, Andrew G., & Steiner, Myles A.. Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy. United States. doi:10.1109/JPHOTOV.2017.2655035.
Jain, Nikhil, Geisz, John F., France, Ryan M., Norman, Andrew G., and Steiner, Myles A.. 2017. "Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy". United States. doi:10.1109/JPHOTOV.2017.2655035. https://www.osti.gov/servlets/purl/1360894.
@article{osti_1360894,
title = {Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy},
author = {Jain, Nikhil and Geisz, John F. and France, Ryan M. and Norman, Andrew G. and Steiner, Myles A.},
abstractNote = {Quaternary GaInAsP solar cells with a bandgap of ~1.7 eV offer an attractive Al-free alternative to AlGaAs solar cells for integration in next generation of III-V multijunction solar cells with five or more junctions. Development of a high quality 1.7 eV solar cell is also highly sought for III-V/Si tandem solar cells. In this work, we systematically investigate the impact of varying base thicknesses and doping concentrations on the carrier collection and performance of 1.7 eV GaInAsP solar cells. The photoresponse of these cells is found to be very sensitive to p-type zinc doping concentration in the base layer. Prototype 1.7 eV GaInAsP n-i-p solar cell designs are demonstrated that leverage enhanced depletion width as an effective method to achieve peak quantum efficiency exceeding 90%. We also show the importance of optimal i-layer thickness as a critical parameter to reduce the drop in fill-factor (FF) due to field-aided collection. Furthermore, we demonstrate substantial improvement in the cell performance when the GaInAsP base layer is grown at 650 degrees C instead of 600 degrees C. The best GaInAsP solar cell (Eg ~ 1.65 eV) in this study achieved JSC of 21.1 mA/cm2, VOC of 1.18 V, FF of 83.8%, and an efficiency of 20.8 +/- 1% under AM1.5D spectrum (21.5 +/- 1% under AM1.5G spectrum). Finally, these results highlight the potential of Al-free GaInAsP solar cells for integration in the next generation of III-V multijunction solar cells.},
doi = {10.1109/JPHOTOV.2017.2655035},
journal = {IEEE Journal of Photovoltaics},
number = 3,
volume = 7,
place = {United States},
year = {2017},
month = {2}
}