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Title: Antimony diffusion in CdTe

Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. Lastly, the theory and experimental results create new understanding of group V defect kinetics in CdTe.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Beijing Computational Science Research Center, Beijing (China)
Publication Date:
Report Number(s):
NREL/JA-5K00-65802
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 3; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; antimony; density functional theory; diffusion processes; grain boundaries; II-VI semiconductor materials
OSTI Identifier:
1360893

Colegrove, Eric, Harvey, Steven P., Yang, Ji -Hui, Burst, James M., Duenow, Joel N., Albin, David S., Wei, Su -Huai, and Metzger, Wyatt K.. Antimony diffusion in CdTe. United States: N. p., Web. doi:10.1109/JPHOTOV.2017.2655033.
Colegrove, Eric, Harvey, Steven P., Yang, Ji -Hui, Burst, James M., Duenow, Joel N., Albin, David S., Wei, Su -Huai, & Metzger, Wyatt K.. Antimony diffusion in CdTe. United States. doi:10.1109/JPHOTOV.2017.2655033.
Colegrove, Eric, Harvey, Steven P., Yang, Ji -Hui, Burst, James M., Duenow, Joel N., Albin, David S., Wei, Su -Huai, and Metzger, Wyatt K.. 2017. "Antimony diffusion in CdTe". United States. doi:10.1109/JPHOTOV.2017.2655033. https://www.osti.gov/servlets/purl/1360893.
@article{osti_1360893,
title = {Antimony diffusion in CdTe},
author = {Colegrove, Eric and Harvey, Steven P. and Yang, Ji -Hui and Burst, James M. and Duenow, Joel N. and Albin, David S. and Wei, Su -Huai and Metzger, Wyatt K.},
abstractNote = {Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. Lastly, the theory and experimental results create new understanding of group V defect kinetics in CdTe.},
doi = {10.1109/JPHOTOV.2017.2655033},
journal = {IEEE Journal of Photovoltaics},
number = 3,
volume = 7,
place = {United States},
year = {2017},
month = {2}
}