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Title: Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3]
  1. Arizona State Univ., Tempe, AZ (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Semilab SDI LLC, Tampa, FL (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-68608
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 2; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; durability; high voltage; potential-induced degradation (PID); reliability; sheet resistance; silicon nitride (SiNx)
OSTI Identifier:
1360668

Oh, Jaewon, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, and D'Amico, John. Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation. United States: N. p., Web. doi:10.1109/JPHOTOV.2016.2642952.
Oh, Jaewon, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, & D'Amico, John. Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation. United States. doi:10.1109/JPHOTOV.2016.2642952.
Oh, Jaewon, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, and D'Amico, John. 2017. "Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation". United States. doi:10.1109/JPHOTOV.2016.2642952. https://www.osti.gov/servlets/purl/1360668.
@article{osti_1360668,
title = {Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation},
author = {Oh, Jaewon and Dauksher, Bill and Bowden, Stuart and Tamizhmani, Govindasamy and Hacke, Peter and D'Amico, John},
abstractNote = {We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiNx refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 1021 cm-3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.},
doi = {10.1109/JPHOTOV.2016.2642952},
journal = {IEEE Journal of Photovoltaics},
number = 2,
volume = 7,
place = {United States},
year = {2017},
month = {1}
}