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Title: Intrinsically stretchable and healable semiconducting polymer for organic transistors

Developing a molecular design paradigm for conjugated polymers applicable to intrinsically stretchable semiconductors is crucial toward the next generation of wearable electronics. Current molecular design rules for high charge carrier mobility semiconducting polymers are unable to render the fabricated devices simultaneously stretchable and mechanically robust. Here in this paper, we present a new design concept to address the above challenge, while maintaining excellent electronic performance. This concept involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining its high charge transport ability. As a result, our polymer is able to recover its high mobility performance (>1 cm 2/Vs) even after 100 cycles at 100% applied strain. Furthermore, we observed that the polymer can be efficiently repaired and/or healed with a simple heat and solvent treatment. These improved mechanical properties of our fabricated stretchable semiconductor enabled us to fabricate highly stretchable and high performance wearable organic transistors. This material design concept should illuminate and advance the pathways for future development of fully stretchable and healable skin-inspired wearable electronics.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [1] ;  [3] ;  [5] ;  [6] ;  [1] ;  [1]
  1. Stanford Univ., CA (United States). Dept. of Chemical Engineering
  2. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Asahi Kasei Corporation, Fuji (Japan). Corporate Research and Development, Performance Materials Technology Center
  3. Stanford Univ., CA (United States). Dept. of Electrical Engineering
  4. Stanford Univ., CA (United States). Dept. of Chemical Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
  5. Stanford Univ., CA (United States). Dept. of of Civil and Environmental Engineering
  6. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Samsung Advanced Inst. of Technology, Yeongtong-gu, Suwon-si (South Korea)
Publication Date:
Grant/Contract Number:
AC02-76SF00515; FA9550-15-1-0106; DGE-114747
Type:
Accepted Manuscript
Journal Name:
Nature (London)
Additional Journal Information:
Journal Name: Nature (London); Journal Volume: 539; Journal Issue: 7629; Journal ID: ISSN 0028-0836
Publisher:
Nature Publishing Group
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Air Force Office of Scientific Research (AFOSR); Ministry of Science and Technology, Taiwan; Swiss National Science Foundation (SNSF)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Conjugated polymers; Electronic devices
OSTI Identifier:
1360199