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Title: π Berry phase and Zeeman splitting of Weyl semimetal TaP

Here, the recent breakthrough in the discovery of Weyl fermions in monopnictide semimetals provides opportunities to explore the exotic properties of relativistic fermions in condensed matter. The chiral anomaly-induced negative magnetoresistance and π Berry phase are two fundamental transport properties associated with the topological characteristics of Weyl semimetals. Since monopnictide semimetals are multiple-band systems, resolving clear Berry phase for each Fermi pocket remains a challenge. Here we report the determination of Berry phases of multiple Fermi pockets of Weyl semimetal TaP through high field quantum transport measurements. We show our TaP single crystal has the signatures of a Weyl state, including light effective quasiparticle masses, ultrahigh carrier mobility, as well as negative longitudinal magnetoresistance. Furthermore, we have generalized the Lifshitz-Kosevich formula for multiple-band Shubnikov-de Haas (SdH) oscillations and extracted the Berry phases of π for multiple Fermi pockets in TaP through the direct fits of the modified LK formula to the SdH oscillations. In high fields, we also probed signatures of Zeeman splitting, from which the Landé g-factor is extracted.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [1]
  1. Tulane Univ., New Orleans, LA (United States)
  2. Florida State Univ., Tallahassee, FL (United States)
  3. Univ. of New Orleans, New Orleans, LA (United States)
Publication Date:
Grant/Contract Number:
SC0012432
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Louisiana Board of Regents, Baton Rouge, LA (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; electronic properties and materials; topological insulators
OSTI Identifier:
1360142