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Title: Substrate noise isolation improvement in a single-well standard CMOS process

Authors:
; ;
Publication Date:
Grant/Contract Number:
UID/EEA/50008/2013; PEst-OE/EEI/LA0008/2014
Type:
Publisher's Accepted Manuscript
Journal Name:
Integration, The VLSI Journal
Additional Journal Information:
Journal Name: Integration, The VLSI Journal Journal Volume: 52 Journal Issue: C; Journal ID: ISSN 0167-9260
Publisher:
Elsevier
Sponsoring Org:
USDOE Office of Nuclear Energy (NE), Fuel Cycle Technologies (NE-5)
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1359962

Mendonça dos Santos, P., Mendes, Luís, and Vaz, João Caldinhas. Substrate noise isolation improvement in a single-well standard CMOS process. Netherlands: N. p., Web. doi:10.1016/j.vlsi.2015.09.006.
Mendonça dos Santos, P., Mendes, Luís, & Vaz, João Caldinhas. Substrate noise isolation improvement in a single-well standard CMOS process. Netherlands. doi:10.1016/j.vlsi.2015.09.006.
Mendonça dos Santos, P., Mendes, Luís, and Vaz, João Caldinhas. 2016. "Substrate noise isolation improvement in a single-well standard CMOS process". Netherlands. doi:10.1016/j.vlsi.2015.09.006.
@article{osti_1359962,
title = {Substrate noise isolation improvement in a single-well standard CMOS process},
author = {Mendonça dos Santos, P. and Mendes, Luís and Vaz, João Caldinhas},
abstractNote = {},
doi = {10.1016/j.vlsi.2015.09.006},
journal = {Integration, The VLSI Journal},
number = C,
volume = 52,
place = {Netherlands},
year = {2016},
month = {1}
}