Prediction of recrystallization times in electroplated copper thin films

Treger, Mikhail; Witt, Christian; Cabral, Jr., Cyril; Murray, Conal; Jordan-Sweet, Jean; Rosenberg, Robert; Eisenbraun, Eric; Noyan, I. C.

doi:10.1016/j.tsf.2016.06.056

Title: Prediction of recrystallization times in electroplated copper thin films

Full Record
Other Related Research

Authors:: Treger, Mikhail; Witt, Christian; Cabral, Jr., Cyril; Murray, Conal; Jordan-Sweet, Jean; Rosenberg, Robert; Eisenbraun, Eric; Noyan, I. C.

Publication Date:: 2016-09-01

Sponsoring Org.:: USDOE

OSTI Identifier:: 1359949

Grant/Contract Number:: AC02-98CH10886

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Thin Solid Films

Additional Journal Information:: Journal Name: Thin Solid Films Journal Volume: 615 Journal Issue: C; Journal ID: ISSN 0040-6090

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Treger, Mikhail, Witt, Christian, Cabral, Jr., Cyril, Murray, Conal, Jordan-Sweet, Jean, Rosenberg, Robert, Eisenbraun, Eric, and Noyan, I. C. Prediction of recrystallization times in electroplated copper thin films.  Netherlands: N. p., 2016. 
Web.  doi:10.1016/j.tsf.2016.06.056.

Copy to clipboard


                    Treger, Mikhail, Witt, Christian, Cabral, Jr., Cyril, Murray, Conal, Jordan-Sweet, Jean, Rosenberg, Robert, Eisenbraun, Eric, & Noyan, I. C. Prediction of recrystallization times in electroplated copper thin films.  Netherlands.  https://doi.org/10.1016/j.tsf.2016.06.056

Copy to clipboard


                    Treger, Mikhail, Witt, Christian, Cabral, Jr., Cyril, Murray, Conal, Jordan-Sweet, Jean, Rosenberg, Robert, Eisenbraun, Eric, and Noyan, I. C. Thu .  
"Prediction of recrystallization times in electroplated copper thin films".  Netherlands.  https://doi.org/10.1016/j.tsf.2016.06.056.

Copy to clipboard


                    
@article{osti_1359949,

  title        = {Prediction of recrystallization times in electroplated copper thin films},

  author       = {Treger, Mikhail and Witt, Christian and Cabral, Jr., Cyril and Murray, Conal and Jordan-Sweet, Jean and Rosenberg, Robert and Eisenbraun, Eric and Noyan, I. C.},

  abstractNote = {},

  doi          = {10.1016/j.tsf.2016.06.056},

  journal      = {Thin Solid Films},

  number       = C,

  volume       = 615,

  place        = {Netherlands},

  year         = {2016},

  month        = {9}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1016/j.tsf.2016.06.056

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 3 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Prediction of recrystallization times in electroplated copper thin films

Journal Article Treger, Mikhail ; Witt, Christian ; Cabral, Cyril ; ... - Thin Solid Films
https://doi.org/10.1016/j.tsf.2016.06.056
Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements

Journal Article Treger, Mikhail ; Noyan, I. C. ; Witt, Christian ; ... - Journal of Applied Physics

Concurrent in-situ four-point probe resistivity and high resolution synchrotron x-ray diffraction measurements were used to characterize room temperature recrystallization in electroplated Cu thin films. The x-ray data were used to obtain the variation with time of the integrated intensities and the peak-breadth from the Cu 111 and 200 reflections of the transforming grains. The variation of the integrated intensity and resistivity data with time was analyzed using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. For both 111-textured and non-textured electroplated Cu films, four-point probe resistivity measurements yielded shorter transformation times than the values obtained from the integrated intensities of the corresponding Cu 111more »« less
https://doi.org/10.1063/1.4807899
Characterization of Room Temperature Recrystallization Kinetics in Electroplated Copper Films With Concurrent X-ray Diffraction and Electrical Resistivity Measurements

Journal Article Treger, M. ; Witt, C. ; Cabral, C. ; ... - Journal of Applied Physics
https://doi.org/10.1063/1.4807899
A Quantitative Analysis of Room Temperature Recrystallization Kinetics in Electroplated Copper Films using High Resolution X-ray Diffraction

Journal Article Ying, A ; Witt, K ; Jordan-Sweet, J ; ... - Journal of Applied Physics

Time-resolved in situ x-ray diffraction measurements were used to study the room-temperature recrystallization kinetics of electroplated copper thin films with thicknesses between 400 and 1000 nm. The thinnest films exhibited limited recrystallization and subsequent growth of grains, while recrystallized grains in the thicker films grew until all as-plated microstructure was consumed. For all films, recrystallized grains that belonged to the majority texture component, <111>, started growing after the shortest incubation time. These grains exhibited volumetric growth until they achieved the film thickness. After this point the growth mode became planar, with the <111>-type grains growing in the plane of themore »« less
https://doi.org/10.1063/1.3514096
In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications

Journal Article Poudel, Deewakar ; Belfore, Benjamin ; Ashrafee, Tasnuva ; ... - Energies (Basel)

Cu(In,Ga)Se₂ (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effectsmore »« less
https://doi.org/10.3390/en14133938

Similar Records