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Title: Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1359948
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Name: Thin Solid Films Journal Volume: 608 Journal Issue: C; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Beres, M., Yu, K. M., Syzdek, J., and Mao, S. S. Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process. Netherlands: N. p., 2016. Web. doi:10.1016/j.tsf.2016.04.019.
Beres, M., Yu, K. M., Syzdek, J., & Mao, S. S. Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process. Netherlands. https://doi.org/10.1016/j.tsf.2016.04.019
Beres, M., Yu, K. M., Syzdek, J., and Mao, S. S. Wed . "Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process". Netherlands. https://doi.org/10.1016/j.tsf.2016.04.019.
@article{osti_1359948,
title = {Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process},
author = {Beres, M. and Yu, K. M. and Syzdek, J. and Mao, S. S.},
abstractNote = {},
doi = {10.1016/j.tsf.2016.04.019},
journal = {Thin Solid Films},
number = C,
volume = 608,
place = {Netherlands},
year = {Wed Jun 01 00:00:00 EDT 2016},
month = {Wed Jun 01 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.tsf.2016.04.019

Citation Metrics:
Cited by: 9 works
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Works referenced in this record:

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