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Title: The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
SC0002623
Type:
Publisher's Accepted Manuscript
Journal Name:
Solid State Communications
Additional Journal Information:
Journal Name: Solid State Communications Journal Volume: 217 Journal Issue: C; Journal ID: ISSN 0038-1098
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1359882

Chan, Tzu-Liang, Souto-Casares, Jaime, Chelikowsky, James R., Ho, Kai-Ming, Wang, Cai-Zhuang, and Zhang, S. B.. The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces. United Kingdom: N. p., Web. doi:10.1016/j.ssc.2015.05.014.
Chan, Tzu-Liang, Souto-Casares, Jaime, Chelikowsky, James R., Ho, Kai-Ming, Wang, Cai-Zhuang, & Zhang, S. B.. The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces. United Kingdom. doi:10.1016/j.ssc.2015.05.014.
Chan, Tzu-Liang, Souto-Casares, Jaime, Chelikowsky, James R., Ho, Kai-Ming, Wang, Cai-Zhuang, and Zhang, S. B.. 2015. "The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces". United Kingdom. doi:10.1016/j.ssc.2015.05.014.
@article{osti_1359882,
title = {The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces},
author = {Chan, Tzu-Liang and Souto-Casares, Jaime and Chelikowsky, James R. and Ho, Kai-Ming and Wang, Cai-Zhuang and Zhang, S. B.},
abstractNote = {},
doi = {10.1016/j.ssc.2015.05.014},
journal = {Solid State Communications},
number = C,
volume = 217,
place = {United Kingdom},
year = {2015},
month = {9}
}