skip to main content

DOE PAGESDOE PAGES

Title: Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Luminescence
Additional Journal Information:
Journal Volume: 178; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-11 10:22:47; Journal ID: ISSN 0022-2313
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1359351

Rodrigues, J., Fialho, M., Magalhães, S., Correia, M. R., Rino, L., Alves, E., Neves, A. J., Lorenz, K., and Monteiro, T.. Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers. Netherlands: N. p., Web. doi:10.1016/j.jlumin.2016.05.018.
Rodrigues, J., Fialho, M., Magalhães, S., Correia, M. R., Rino, L., Alves, E., Neves, A. J., Lorenz, K., & Monteiro, T.. Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers. Netherlands. doi:10.1016/j.jlumin.2016.05.018.
Rodrigues, J., Fialho, M., Magalhães, S., Correia, M. R., Rino, L., Alves, E., Neves, A. J., Lorenz, K., and Monteiro, T.. 2016. "Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers". Netherlands. doi:10.1016/j.jlumin.2016.05.018.
@article{osti_1359351,
title = {Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers},
author = {Rodrigues, J. and Fialho, M. and Magalhães, S. and Correia, M. R. and Rino, L. and Alves, E. and Neves, A. J. and Lorenz, K. and Monteiro, T.},
abstractNote = {},
doi = {10.1016/j.jlumin.2016.05.018},
journal = {Journal of Luminescence},
number = C,
volume = 178,
place = {Netherlands},
year = {2016},
month = {10}
}