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Title: Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC05-06OR2310; DMR 1121053
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 432; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-19 01:23:10; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1359315

Pimputkar, S., Suihkonen, S., Imade, M., Mori, Y., Speck, J. S., and Nakamura, S.. Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2015.09.016.
Pimputkar, S., Suihkonen, S., Imade, M., Mori, Y., Speck, J. S., & Nakamura, S.. Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals. Netherlands. doi:10.1016/j.jcrysgro.2015.09.016.
Pimputkar, S., Suihkonen, S., Imade, M., Mori, Y., Speck, J. S., and Nakamura, S.. 2015. "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals". Netherlands. doi:10.1016/j.jcrysgro.2015.09.016.
@article{osti_1359315,
title = {Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals},
author = {Pimputkar, S. and Suihkonen, S. and Imade, M. and Mori, Y. and Speck, J. S. and Nakamura, S.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.09.016},
journal = {Journal of Crystal Growth},
number = C,
volume = 432,
place = {Netherlands},
year = {2015},
month = {12}
}