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Title: Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium

Authors:
ORCiD logo; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1359227
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Alloys and Compounds
Additional Journal Information:
Journal Name: Journal of Alloys and Compounds Journal Volume: 664 Journal Issue: C; Journal ID: ISSN 0925-8388
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Fochuk, Petro, Panchuk, Oleh, Nykonyuk, Yevhen, Solodin, Serhiy, Diachenko, Lilya, Grill, Roman, and Shaw, Derek. Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium. Netherlands: N. p., 2016. Web. doi:10.1016/j.jallcom.2015.12.212.
Fochuk, Petro, Panchuk, Oleh, Nykonyuk, Yevhen, Solodin, Serhiy, Diachenko, Lilya, Grill, Roman, & Shaw, Derek. Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium. Netherlands. doi:10.1016/j.jallcom.2015.12.212.
Fochuk, Petro, Panchuk, Oleh, Nykonyuk, Yevhen, Solodin, Serhiy, Diachenko, Lilya, Grill, Roman, and Shaw, Derek. Fri . "Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium". Netherlands. doi:10.1016/j.jallcom.2015.12.212.
@article{osti_1359227,
title = {Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium},
author = {Fochuk, Petro and Panchuk, Oleh and Nykonyuk, Yevhen and Solodin, Serhiy and Diachenko, Lilya and Grill, Roman and Shaw, Derek},
abstractNote = {},
doi = {10.1016/j.jallcom.2015.12.212},
journal = {Journal of Alloys and Compounds},
number = C,
volume = 664,
place = {Netherlands},
year = {2016},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.jallcom.2015.12.212

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