Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium

Fochuk, Petro; Panchuk, Oleh; Nykonyuk, Yevhen; Solodin, Serhiy; Diachenko, Lilya; Grill, Roman; Shaw, Derek

doi:10.1016/j.jallcom.2015.12.212

Title: Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium

Full Record
Other Related Research

Authors:

; Panchuk, Oleh; Nykonyuk, Yevhen; Solodin, Serhiy; Diachenko, Lilya; Grill, Roman; Shaw, Derek

Publication Date:: Fri Apr 01 00:00:00 EDT 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1359227

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Alloys and Compounds

Additional Journal Information:: Journal Name: Journal of Alloys and Compounds Journal Volume: 664 Journal Issue: C; Journal ID: ISSN 0925-8388

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Fochuk, Petro, Panchuk, Oleh, Nykonyuk, Yevhen, Solodin, Serhiy, Diachenko, Lilya, Grill, Roman, and Shaw, Derek. Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium.  Netherlands: N. p., 2016. 
Web.  doi:10.1016/j.jallcom.2015.12.212.

Copy to clipboard


                    Fochuk, Petro, Panchuk, Oleh, Nykonyuk, Yevhen, Solodin, Serhiy, Diachenko, Lilya, Grill, Roman, & Shaw, Derek. Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium.  Netherlands.  https://doi.org/10.1016/j.jallcom.2015.12.212

Copy to clipboard


                    Fochuk, Petro, Panchuk, Oleh, Nykonyuk, Yevhen, Solodin, Serhiy, Diachenko, Lilya, Grill, Roman, and Shaw, Derek. Fri .  
"Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium".  Netherlands.  https://doi.org/10.1016/j.jallcom.2015.12.212.

Copy to clipboard


                    
@article{osti_1359227,

  title        = {Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium},

  author       = {Fochuk, Petro and Panchuk, Oleh and Nykonyuk, Yevhen and Solodin, Serhiy and Diachenko, Lilya and Grill, Roman and Shaw, Derek},

  abstractNote = {},

  doi          = {10.1016/j.jallcom.2015.12.212},

  journal      = {Journal of Alloys and Compounds},

  number       = C,

  volume       = 664,

  place        = {Netherlands},

  year         = {Fri Apr 01 00:00:00 EDT 2016},

  month        = {Fri Apr 01 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1016/j.jallcom.2015.12.212

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals

Journal Article Parfenyuk, O. A., E-mail: p_ebox@mail.ru ; Ilashchuk, M I ; Ulyanitskii, K S ; ... - Semiconductors

The CdTe:Si single crystals with Si concentration in the range of C{sub Si}{sup 0}=2x10{sup 18}-5x10{sup 19} cm{sup -3} are grown by the Bridgman-Stockbarger method. The samples were of the n-and p-type with electrical conductivity {sigma}=2x10{sup -1}-8x10{sup -9} {omega}{sup -1} cm{sup -1}. Being heated in the temperature range 300-440 K, the p-CdTe crystals were annealed, and their conductivity decreased. The shape of the low-temperature (5-20 K) photoluminescence spectra of the samples are indicative of their high structural quality. The specific feature of the emission of the CdTe:Si crystals is its decrease in the intensity of all lines induced by donors asmore »« less
https://doi.org/10.1134/S1063782606020059
Point Defects in CdTe Bulk Single Crystals Grown in Cd-Rich Conditions

Conference Tuerxunjiang, Abulikemu ; Swain, Santosh K. ; Barnes, Teresa M ; ...

CdTe materials tend to grow in a Te-rich stoichiometry due to the higher vapor pressure of Cd over Te, making the material p-type. Growing the crystal in an extra Cd environment helps to restore the stoichiometry and changes the material from p-type to semi-insulating or n-type conductivity. The amount of Cd and Te vacancies is expected to change with variations of the stoichiometry. To better understand the effect of stoichiometry on intrinsic defects, we grew a CdTe crystal boule in a Cd-rich conditions using the Vertical Bridgman technique. The electrical properties and defect structures of the resulting sample were comparedmore »« less
https://doi.org/10.1109/PVSC.2017.8366766
Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation

Journal Article Gul, R. ; Roy, U. N. ; Bolotnikov, A. E. ; ... - APL materials

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.
https://doi.org/10.1063/1.4917270
Point defects in CdTe_xSe_1-x crystals grown from a Te-rich solution for applications in detecting radiation

Journal Article Gul, R. ; Roy, U. N. ; Bolotnikov, A. E. ; ... - APL Materials

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.
Cited by 7
https://doi.org/10.1063/1.4917270

Full Text Available
Equilibrium Configurations and Energetics of Point Defects in Two-Dimensional Colloidal Crystals

Journal Article Pertsinidis, Alexandros ; Ling, X S - Physical Review Letters

We demonstrate a novel method of introducing point defects (mono- and divacancies) in a confined monolayer colloidal crystal by manipulating individual particles with optical tweezers. Digital video microscopy is used to study defect dynamics in real space and time. We verify the numerical predictions that the stable configurations of the defects have reduced symmetry compared to the triangular lattice and discover that in addition they are characterized by distinct topological arrangements of the particles in the defect core. Surprisingly, point defects are thermally excited into separated dislocations, from which we extract the dislocation pair potential.
https://doi.org/10.1103/PhysRevLett.87.098303

Similar Records