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Title: Thermoelectric properties of materials near the band crossing line in Mg 2 Sn–Mg 2 Ge–Mg 2 Si system

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 103; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-17 12:55:50; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1358706

Mao, Jun, Kim, Hee Seok, Shuai, Jing, Liu, Zihang, He, Ran, Saparamadu, Udara, Tian, Fei, Liu, Weishu, and Ren, Zhifeng. Thermoelectric properties of materials near the band crossing line in Mg 2 Sn–Mg 2 Ge–Mg 2 Si system. United States: N. p., Web. doi:10.1016/j.actamat.2015.11.006.
Mao, Jun, Kim, Hee Seok, Shuai, Jing, Liu, Zihang, He, Ran, Saparamadu, Udara, Tian, Fei, Liu, Weishu, & Ren, Zhifeng. Thermoelectric properties of materials near the band crossing line in Mg 2 Sn–Mg 2 Ge–Mg 2 Si system. United States. doi:10.1016/j.actamat.2015.11.006.
Mao, Jun, Kim, Hee Seok, Shuai, Jing, Liu, Zihang, He, Ran, Saparamadu, Udara, Tian, Fei, Liu, Weishu, and Ren, Zhifeng. 2016. "Thermoelectric properties of materials near the band crossing line in Mg 2 Sn–Mg 2 Ge–Mg 2 Si system". United States. doi:10.1016/j.actamat.2015.11.006.
@article{osti_1358706,
title = {Thermoelectric properties of materials near the band crossing line in Mg 2 Sn–Mg 2 Ge–Mg 2 Si system},
author = {Mao, Jun and Kim, Hee Seok and Shuai, Jing and Liu, Zihang and He, Ran and Saparamadu, Udara and Tian, Fei and Liu, Weishu and Ren, Zhifeng},
abstractNote = {},
doi = {10.1016/j.actamat.2015.11.006},
journal = {Acta Materialia},
number = C,
volume = 103,
place = {United States},
year = {2016},
month = {1}
}