DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: 3-D point defect density distributions in thin film Cu(In,Ga)Se2 measured by atom probe tomography

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1358702
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Name: Acta Materialia Journal Volume: 102 Journal Issue: C; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

Citation Formats

Stokes, Adam, Al-Jassim, Mowafak, Diercks, David R., Egaas, Brian, and Gorman, Brian. 3-D point defect density distributions in thin film Cu(In,Ga)Se2 measured by atom probe tomography. United States: N. p., 2016. Web. doi:10.1016/j.actamat.2015.09.035.
Stokes, Adam, Al-Jassim, Mowafak, Diercks, David R., Egaas, Brian, & Gorman, Brian. 3-D point defect density distributions in thin film Cu(In,Ga)Se2 measured by atom probe tomography. United States. https://doi.org/10.1016/j.actamat.2015.09.035
Stokes, Adam, Al-Jassim, Mowafak, Diercks, David R., Egaas, Brian, and Gorman, Brian. Fri . "3-D point defect density distributions in thin film Cu(In,Ga)Se2 measured by atom probe tomography". United States. https://doi.org/10.1016/j.actamat.2015.09.035.
@article{osti_1358702,
title = {3-D point defect density distributions in thin film Cu(In,Ga)Se2 measured by atom probe tomography},
author = {Stokes, Adam and Al-Jassim, Mowafak and Diercks, David R. and Egaas, Brian and Gorman, Brian},
abstractNote = {},
doi = {10.1016/j.actamat.2015.09.035},
journal = {Acta Materialia},
number = C,
volume = 102,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2016},
month = {Fri Jan 01 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.actamat.2015.09.035

Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Defect physics of the CuInSe 2 chalcopyrite semiconductor
journal, April 1998


Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs
journal, May 1997


Ab initio calculation of intrinsic point defects in CuInSe2
journal, September 2003


Band offsets and optical bowings of chalcopyrites and Zn‐based II‐VI alloys
journal, September 1995

  • Wei, Su‐Huai; Zunger, Alex
  • Journal of Applied Physics, Vol. 78, Issue 6
  • DOI: 10.1063/1.359901

High‐efficiency CuIn x Ga 1− x Se 2 solar cells made from (In x ,Ga 1− x ) 2 Se 3 precursor films
journal, July 1994

  • Gabor, Andrew M.; Tuttle, John R.; Albin, David S.
  • Applied Physics Letters, Vol. 65, Issue 2
  • DOI: 10.1063/1.112670

In situ site-specific specimen preparation for atom probe tomography
journal, February 2007


Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe 2
journal, March 1993

  • Schmid, D.; Ruckh, M.; Grunwald, F.
  • Journal of Applied Physics, Vol. 73, Issue 6
  • DOI: 10.1063/1.353020

Crystalline phases at the p ‐ to n ‐type transition in Cu‐ternary semiconducting films
journal, August 1996

  • Morell, G.; Katiyar, R. S.; Weisz, S. Z.
  • Applied Physics Letters, Vol. 69, Issue 7
  • DOI: 10.1063/1.117104

Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devices
journal, January 2009

  • Lehmann, Sebastian; Fuertes Marrón, David; Merino Álvarez, José Manuel
  • MRS Proceedings, Vol. 1165
  • DOI: 10.1557/PROC-1165-M03-09

Cu depletion at the CuInSe2 surface
journal, April 2003

  • Liao, Dongxiang; Rockett, Angus
  • Applied Physics Letters, Vol. 82, Issue 17
  • DOI: 10.1063/1.1570516

Microstructure of surface layers in Cu(In,Ga)Se2 thin films
journal, August 2002

  • Yan, Y.; Jones, K. M.; Abushama, J.
  • Applied Physics Letters, Vol. 81, Issue 6
  • DOI: 10.1063/1.1498499

Photoemission studies on Cu(In, Ga)Se2 thin films and related binary selenides
journal, December 1996


Microstructural characterization of Cu-poor Cu (In, Ga)Se2 surface layer
journal, January 2012


Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices
journal, July 1999

  • Rau, U.; Braunger, D.; Herberholz, R.
  • Journal of Applied Physics, Vol. 86, Issue 1
  • DOI: 10.1063/1.370758

Cross-correlative TEM and atom probe analysis of partial crystallisation in NiNbSn metallic glasses
journal, June 2008

  • Gorman, B. P.; Puthucode, A.; Diercks, D. R.
  • Materials Science and Technology, Vol. 24, Issue 6
  • DOI: 10.1179/174328408X293595

Three-dimensional atomic scale microscopy with the atom probe
journal, June 1999