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Title: Crystal growth and detector performance of large size High-purity Ge crystals

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1357685
Grant/Contract Number:  
FG02-10ER46709
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Materials Science in Semiconductor Processing
Additional Journal Information:
Journal Name: Materials Science in Semiconductor Processing Journal Volume: 39 Journal Issue: C; Journal ID: ISSN 1369-8001
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Wang, Guojian, Amman, Mark, Mei, Hao, Mei, Dongming, Irmscher, Klaus, Guan, Yutong, and Yang, Gang. Crystal growth and detector performance of large size High-purity Ge crystals. Netherlands: N. p., 2015. Web. doi:10.1016/j.mssp.2015.04.044.
Wang, Guojian, Amman, Mark, Mei, Hao, Mei, Dongming, Irmscher, Klaus, Guan, Yutong, & Yang, Gang. Crystal growth and detector performance of large size High-purity Ge crystals. Netherlands. doi:10.1016/j.mssp.2015.04.044.
Wang, Guojian, Amman, Mark, Mei, Hao, Mei, Dongming, Irmscher, Klaus, Guan, Yutong, and Yang, Gang. Sun . "Crystal growth and detector performance of large size High-purity Ge crystals". Netherlands. doi:10.1016/j.mssp.2015.04.044.
@article{osti_1357685,
title = {Crystal growth and detector performance of large size High-purity Ge crystals},
author = {Wang, Guojian and Amman, Mark and Mei, Hao and Mei, Dongming and Irmscher, Klaus and Guan, Yutong and Yang, Gang},
abstractNote = {},
doi = {10.1016/j.mssp.2015.04.044},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 39,
place = {Netherlands},
year = {2015},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.mssp.2015.04.044

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Cited by: 3 works
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