Crystal growth and detector performance of large size High-purity Ge crystals
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1357685
- Grant/Contract Number:
- FG02-10ER46709
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Materials Science in Semiconductor Processing
- Additional Journal Information:
- Journal Name: Materials Science in Semiconductor Processing Journal Volume: 39 Journal Issue: C; Journal ID: ISSN 1369-8001
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Wang, Guojian, Amman, Mark, Mei, Hao, Mei, Dongming, Irmscher, Klaus, Guan, Yutong, and Yang, Gang. Crystal growth and detector performance of large size High-purity Ge crystals. Netherlands: N. p., 2015.
Web. doi:10.1016/j.mssp.2015.04.044.
Wang, Guojian, Amman, Mark, Mei, Hao, Mei, Dongming, Irmscher, Klaus, Guan, Yutong, & Yang, Gang. Crystal growth and detector performance of large size High-purity Ge crystals. Netherlands. https://doi.org/10.1016/j.mssp.2015.04.044
Wang, Guojian, Amman, Mark, Mei, Hao, Mei, Dongming, Irmscher, Klaus, Guan, Yutong, and Yang, Gang. Sun .
"Crystal growth and detector performance of large size High-purity Ge crystals". Netherlands. https://doi.org/10.1016/j.mssp.2015.04.044.
@article{osti_1357685,
title = {Crystal growth and detector performance of large size High-purity Ge crystals},
author = {Wang, Guojian and Amman, Mark and Mei, Hao and Mei, Dongming and Irmscher, Klaus and Guan, Yutong and Yang, Gang},
abstractNote = {},
doi = {10.1016/j.mssp.2015.04.044},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 39,
place = {Netherlands},
year = {Sun Nov 01 00:00:00 EDT 2015},
month = {Sun Nov 01 00:00:00 EDT 2015}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.mssp.2015.04.044
https://doi.org/10.1016/j.mssp.2015.04.044
Other availability
Cited by: 16 works
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