skip to main content

DOE PAGESDOE PAGES

Title: Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS 2 on Graphene for Enhanced Photoresponse

Recently the applications of two-dimensional (2D) materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Along with this line, we report the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T'-molybdenum disulfide (MoS 2) heterostructures on graphene with the assistance of supercritical carbon dioxide. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficiently hop to the 1T'-MoS 2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T'-MoS 2 phase are exploited to fill the photoholes on the photo-excited 2H-MoS 2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photo-induced charge carriers on the 2H-MoS 2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [4] ; ORCiD logo [5]
  1. Zhengzhou Univ. (China). College of Materials Science and Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS) and Computational Sciences and Engineering Division
  3. Shaanxi Normal Univ., Xi'an City (China). Key Lab. for Macromolecular Science of Shaanxi Province School of Chemistry and Chemical Engineering
  4. Griffith Univ., QLD (Australia). Griffith School of Environment, Centre for Clean Environment and Energy; Chinese Academy of Sciences (CAS), Hefei (China). Inst. of Solid State Physics, Centre for Environmental and Energy Nanomaterials
  5. Griffith Univ., QLD (Australia). Griffith School of Environment, Centre for Clean Environment and Energy
Publication Date:
Grant/Contract Number:
AC05-00OR22725; 51173170; 21101141
Type:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC); Australian Research Council (ARC); National Natural Science Foundation of China (NNSFC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; triphasic two-dimensional heterostructures; lateral heterojunction; vertical stacking; photoresponses; hydrogen evolution reactions
OSTI Identifier:
1356943

Cui, Weili, Xu, Shanshan S., Yan, Bo, Guo, Zhihua H., Xu, Qun, Sumpter, Bobby G., Huang, Jingsong S., Yin, Shiwei W., Zhao, Huijun J., and Wang, Yun. Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS2 on Graphene for Enhanced Photoresponse. United States: N. p., Web. doi:10.1002/aelm.201700024.
Cui, Weili, Xu, Shanshan S., Yan, Bo, Guo, Zhihua H., Xu, Qun, Sumpter, Bobby G., Huang, Jingsong S., Yin, Shiwei W., Zhao, Huijun J., & Wang, Yun. Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS2 on Graphene for Enhanced Photoresponse. United States. doi:10.1002/aelm.201700024.
Cui, Weili, Xu, Shanshan S., Yan, Bo, Guo, Zhihua H., Xu, Qun, Sumpter, Bobby G., Huang, Jingsong S., Yin, Shiwei W., Zhao, Huijun J., and Wang, Yun. 2017. "Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS2 on Graphene for Enhanced Photoresponse". United States. doi:10.1002/aelm.201700024. https://www.osti.gov/servlets/purl/1356943.
@article{osti_1356943,
title = {Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS2 on Graphene for Enhanced Photoresponse},
author = {Cui, Weili and Xu, Shanshan S. and Yan, Bo and Guo, Zhihua H. and Xu, Qun and Sumpter, Bobby G. and Huang, Jingsong S. and Yin, Shiwei W. and Zhao, Huijun J. and Wang, Yun},
abstractNote = {Recently the applications of two-dimensional (2D) materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Along with this line, we report the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T'-molybdenum disulfide (MoS2) heterostructures on graphene with the assistance of supercritical carbon dioxide. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficiently hop to the 1T'-MoS2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T'-MoS2 phase are exploited to fill the photoholes on the photo-excited 2H-MoS2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photo-induced charge carriers on the 2H-MoS2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.},
doi = {10.1002/aelm.201700024},
journal = {Advanced Electronic Materials},
number = ,
volume = 3,
place = {United States},
year = {2017},
month = {5}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996
  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Van der Waals heterostructures
journal, July 2013
  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014
  • Duan, Xidong; Wang, Chen; Shaw, Jonathan C.
  • Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030
  • DOI: 10.1038/nnano.2014.222

Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2
journal, July 2012
  • Eda, Goki; Fujita, Takeshi; Yamaguchi, Hisato
  • ACS Nano, Vol. 6, Issue 8, p. 7311-7317
  • DOI: 10.1021/nn302422x

Pressure-Dependent Optical and Vibrational Properties of Monolayer Molybdenum Disulfide
journal, December 2014
  • Nayak, Avinash P.; Pandey, Tribhuwan; Voiry, Damien
  • Nano Letters, Vol. 15, Issue 1, p. 346-353
  • DOI: 10.1021/nl5036397

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Raman Spectrum of Graphene and Graphene Layers
journal, October 2006

Photoluminescence from Chemically Exfoliated MoS2
journal, December 2011
  • Eda, Goki; Yamaguchi, Hisato; Voiry, Damien
  • Nano Letters, Vol. 11, Issue 12, p. 5111-5116
  • DOI: 10.1021/nl201874w