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Title: Materials Study of NbN and Ta x N Thin Films for SNS Josephson Junctions

We investigated properties of NbN and Ta xN thin films grown at ambient temperatures on SiO 2/Si substrates by reactive-pulsed laser deposition and reactive magnetron sputtering (MS) as a function of N 2 gas flow. Both techniques produced films with smooth surfaces, where the surface roughness did not depend on the N 2 gas flow during growth. High crystalline quality, (111) oriented NbN films with T c up to 11 K were produced by both techniques for N contents near 50%. The low temperature transport properties of the Ta xN films depended upon both the N 2 partial pressure used during growth and the film thickness. Furthermore, the root mean square surface roughness of Ta xN films grown by MS increased as the film thickness decreased down to 10 nm.
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 1051-8223; 652916; TRN: US1702156
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Transactions on Applied Superconductivity
Additional Journal Information:
Journal Volume: 27; Journal Issue: 4; Journal ID: ISSN 1051-8223
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE; atomic force microscopy; electronic transport; NbN; TaN; superconducting materials; scanning electron microscopy; x-ray diffraction
OSTI Identifier: