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Title: Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors

Abstract

The holy grail of photodetector technology is dynamic wavelength tunability. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. We employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We also reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. Furthermore, we show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.

Authors:
 [1];  [1];  [2];  [2];  [2]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1356214
Report Number(s):
SAND2016-11874J
Journal ID: ISSN 2045-2322; 649410
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; optical properties and devices; optoelectronic devices and components

Citation Formats

Léonard, François, Spataru, Catalin D., Goldflam, Michael, Peters, David W., and Beechem, Thomas E. Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors. United States: N. p., 2017. Web. doi:10.1038/srep45873.
Léonard, François, Spataru, Catalin D., Goldflam, Michael, Peters, David W., & Beechem, Thomas E. Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors. United States. doi:10.1038/srep45873.
Léonard, François, Spataru, Catalin D., Goldflam, Michael, Peters, David W., and Beechem, Thomas E. Tue . "Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors". United States. doi:10.1038/srep45873. https://www.osti.gov/servlets/purl/1356214.
@article{osti_1356214,
title = {Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors},
author = {Léonard, François and Spataru, Catalin D. and Goldflam, Michael and Peters, David W. and Beechem, Thomas E.},
abstractNote = {The holy grail of photodetector technology is dynamic wavelength tunability. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. We employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We also reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. Furthermore, we show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.},
doi = {10.1038/srep45873},
journal = {Scientific Reports},
number = ,
volume = 8,
place = {United States},
year = {2017},
month = {4}
}

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