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Title: Bipolar resistance switching in Pt/CuO x /Pt via local electrochemical reduction

We investigated the local changes in copper oxidation state and the corresponding resistance changes in Pt/CuO x/Pt nanoscale heterostructures using x-ray nanoprobe spectro-microscopy and current-voltage characterization. After gentle electroforming, during which the current-voltage behavior remains non-linear, the low resistance state was reached, and we also observed regions of 160 nm width that show an increase in Cu K-alpha fluorescence intensity, indicative of partial reduction of the CuO x. Analysis of the current voltage curves showed that the dominant conduction mechanism is Schottky emission and that the resistance state is correlated with the Schottky barrier height. We also propose that the reversible resistivity change in these Pt/CuO x/Pt heterostructures occurs through local electrochemical reduction leading to change of the Schottky barrier height at the interface between Pt and the reduced CuO x layers and to change of the CuO x resistivity within laterally confined portions of the CuO x layer. Our experiments reveal important insights into the mechanism of resistance switching of Pt/CuO x/Pt performed in a current and voltage regime that does not create a metallic conduction path.
Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [2] ;  [2] ;  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Nanoscience and Technology Division
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1355782

D'Aquila, Kenneth, Phatak, Charudatta, Holt, Martin V., Stripe, Benjamin D., Tong, Sheng, Park, Woon Ik, Hong, Seungbum, and Petford-Long, Amanda K.. Bipolar resistance switching in Pt/CuO x /Pt via local electrochemical reduction. United States: N. p., Web. doi:10.1063/1.4883398.
D'Aquila, Kenneth, Phatak, Charudatta, Holt, Martin V., Stripe, Benjamin D., Tong, Sheng, Park, Woon Ik, Hong, Seungbum, & Petford-Long, Amanda K.. Bipolar resistance switching in Pt/CuO x /Pt via local electrochemical reduction. United States. doi:10.1063/1.4883398.
D'Aquila, Kenneth, Phatak, Charudatta, Holt, Martin V., Stripe, Benjamin D., Tong, Sheng, Park, Woon Ik, Hong, Seungbum, and Petford-Long, Amanda K.. 2014. "Bipolar resistance switching in Pt/CuO x /Pt via local electrochemical reduction". United States. doi:10.1063/1.4883398. https://www.osti.gov/servlets/purl/1355782.
@article{osti_1355782,
title = {Bipolar resistance switching in Pt/CuO x /Pt via local electrochemical reduction},
author = {D'Aquila, Kenneth and Phatak, Charudatta and Holt, Martin V. and Stripe, Benjamin D. and Tong, Sheng and Park, Woon Ik and Hong, Seungbum and Petford-Long, Amanda K.},
abstractNote = {We investigated the local changes in copper oxidation state and the corresponding resistance changes in Pt/CuOx/Pt nanoscale heterostructures using x-ray nanoprobe spectro-microscopy and current-voltage characterization. After gentle electroforming, during which the current-voltage behavior remains non-linear, the low resistance state was reached, and we also observed regions of 160 nm width that show an increase in Cu K-alpha fluorescence intensity, indicative of partial reduction of the CuOx. Analysis of the current voltage curves showed that the dominant conduction mechanism is Schottky emission and that the resistance state is correlated with the Schottky barrier height. We also propose that the reversible resistivity change in these Pt/CuOx/Pt heterostructures occurs through local electrochemical reduction leading to change of the Schottky barrier height at the interface between Pt and the reduced CuOx layers and to change of the CuOx resistivity within laterally confined portions of the CuOx layer. Our experiments reveal important insights into the mechanism of resistance switching of Pt/CuOx/Pt performed in a current and voltage regime that does not create a metallic conduction path.},
doi = {10.1063/1.4883398},
journal = {Applied Physics Letters},
number = 24,
volume = 104,
place = {United States},
year = {2014},
month = {6}
}