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Title: Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Abstract

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. Here, this novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

Authors:
 [1];  [2];  [3];  [2];  [3]; ORCiD logo [4];  [4];  [4];  [4]
  1. IBM Almaden Research Center, San Jose, CA (United States); IBM SRDC, Hopewell Junction, NY (United States)
  2. IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
  3. IBM Semiconductor Research and Development Center, Hopewell Junction, NY (United States)
  4. TEL Epion Inc., Billerica, MA (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1354377
Alternate Identifier(s):
OSTI ID: 1421095
Report Number(s):
BNL-112893-2016-JA
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
SC00112704; AC02-98CH10886
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 15; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; C-MOS; X-ray diffraction; Materials modification; Epitaxy; Ion implantation; Semiconductor device fabrication; Depth profiling techniques; Scanning electron microscopy; Silicide; Solid solid interfaces

Citation Formats

Ozcan, Ahmet S., Lavoie, Christian, Alptekin, Emre, Jordan-Sweet, Jean, Zhu, Frank, Leith, Allen, Pfeifer, Brian D., LaRose, J. D., and Russell, N. M. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe. United States: N. p., 2016. Web. doi:10.1063/1.4947054.
Ozcan, Ahmet S., Lavoie, Christian, Alptekin, Emre, Jordan-Sweet, Jean, Zhu, Frank, Leith, Allen, Pfeifer, Brian D., LaRose, J. D., & Russell, N. M. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe. United States. doi:10.1063/1.4947054.
Ozcan, Ahmet S., Lavoie, Christian, Alptekin, Emre, Jordan-Sweet, Jean, Zhu, Frank, Leith, Allen, Pfeifer, Brian D., LaRose, J. D., and Russell, N. M. Tue . "Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe". United States. doi:10.1063/1.4947054. https://www.osti.gov/servlets/purl/1354377.
@article{osti_1354377,
title = {Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe},
author = {Ozcan, Ahmet S. and Lavoie, Christian and Alptekin, Emre and Jordan-Sweet, Jean and Zhu, Frank and Leith, Allen and Pfeifer, Brian D. and LaRose, J. D. and Russell, N. M.},
abstractNote = {We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. Here, this novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.},
doi = {10.1063/1.4947054},
journal = {Journal of Applied Physics},
number = 15,
volume = 119,
place = {United States},
year = {2016},
month = {4}
}

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Works referenced in this record:

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