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Title: Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses

Abstract

Phase errors caused by fabrication variations in silicon photonic integrated circuits are an important problem, which negatively impacts device yield and performance. This study reports our recent progress in the development of a method for permanent, postfabrication phase error correction of silicon photonic circuits based on femtosecond laser irradiation. Using beam shaping technique, we achieve a 14-fold enhancement in the phase tuning resolution of the method with a Gaussian-shaped beam compared to a top-hat beam. The large improvement in the tuning resolution makes the femtosecond laser method potentially useful for very fine phase trimming of silicon photonic circuits. Finally, we also show that femtosecond laser pulses can directly modify silicon photonic devices through a SiO2 cladding layer, making it the only permanent post-fabrication method that can tune silicon photonic circuits protected by an oxide cladding.

Authors:
 [1];  [2];  [1];  [1];  [1]; ORCiD logo [1]
  1. Univ. of Alberta, Edmonton, AB (Canada). Dept. of Electrical and Computer Engineering
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Alberta, Edmonton, AB (Canada)
Publication Date:
Research Org.:
Univ. of Alberta, Edmonton, AB (Canada); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE; Natural Sciences and Engineering Research Council of Canada (NSERC)
OSTI Identifier:
1353179
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Lightwave Technology
Additional Journal Information:
Journal Volume: 35; Journal Issue: 4; Journal ID: ISSN 0733-8724
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Femtosecond laser irradiation; Phase error correction; Post-fabrication index trimming; Silicon photonic circuits

Citation Formats

Bachman, Daniel, Chen, Zhijiang, Wang, Christopher, Fedosejevs, Robert, Tsui, Ying Y., and Van, Vien. Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses. United States: N. p., 2016. Web. doi:10.1109/JLT.2016.2633317.
Bachman, Daniel, Chen, Zhijiang, Wang, Christopher, Fedosejevs, Robert, Tsui, Ying Y., & Van, Vien. Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses. United States. https://doi.org/10.1109/JLT.2016.2633317
Bachman, Daniel, Chen, Zhijiang, Wang, Christopher, Fedosejevs, Robert, Tsui, Ying Y., and Van, Vien. Tue . "Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses". United States. https://doi.org/10.1109/JLT.2016.2633317. https://www.osti.gov/servlets/purl/1353179.
@article{osti_1353179,
title = {Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses},
author = {Bachman, Daniel and Chen, Zhijiang and Wang, Christopher and Fedosejevs, Robert and Tsui, Ying Y. and Van, Vien},
abstractNote = {Phase errors caused by fabrication variations in silicon photonic integrated circuits are an important problem, which negatively impacts device yield and performance. This study reports our recent progress in the development of a method for permanent, postfabrication phase error correction of silicon photonic circuits based on femtosecond laser irradiation. Using beam shaping technique, we achieve a 14-fold enhancement in the phase tuning resolution of the method with a Gaussian-shaped beam compared to a top-hat beam. The large improvement in the tuning resolution makes the femtosecond laser method potentially useful for very fine phase trimming of silicon photonic circuits. Finally, we also show that femtosecond laser pulses can directly modify silicon photonic devices through a SiO2 cladding layer, making it the only permanent post-fabrication method that can tune silicon photonic circuits protected by an oxide cladding.},
doi = {10.1109/JLT.2016.2633317},
journal = {Journal of Lightwave Technology},
number = 4,
volume = 35,
place = {United States},
year = {Tue Nov 29 00:00:00 EST 2016},
month = {Tue Nov 29 00:00:00 EST 2016}
}

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Works referencing / citing this record:

Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devices
journal, January 2018