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Title: Gate-tunable electron interaction in high-κ dielectric films

The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-k) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. Lastly, our findings open a unique laboratory for the in-depth study of topological phase transitions and a plethora of related phenomena, ranging from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.
Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Univ. of Picardie, Amiens (France)
  2. Univ. of Picardie, Amiens (France); ITMO Univ., St. Petersburg (Russia)
  3. Univ. of Regensburg, Regensburg (Germany); A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk (Russia); Novosibirsk State Univ., Novosibirsk (Russia)
  4. Argonne National Lab. (ANL), Lemont, IL (United States); Univ. of Chicago, Chicago, IL (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Materials Sciences and Engineering Division; Russian Federation, Ministry of Education and Science; Alexander von Humboldt Foundation
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electronic properties and materials; surfaces, interfaces and thin films; two-dimensional materials
OSTI Identifier:
1352928

Kondovych, Svitlana, Luk’yanchuk, Igor, Baturina, Tatyana I., and Vinokur, Valerii M.. Gate-tunable electron interaction in high-κ dielectric films. United States: N. p., Web. doi:10.1038/srep42770.
Kondovych, Svitlana, Luk’yanchuk, Igor, Baturina, Tatyana I., & Vinokur, Valerii M.. Gate-tunable electron interaction in high-κ dielectric films. United States. doi:10.1038/srep42770.
Kondovych, Svitlana, Luk’yanchuk, Igor, Baturina, Tatyana I., and Vinokur, Valerii M.. 2017. "Gate-tunable electron interaction in high-κ dielectric films". United States. doi:10.1038/srep42770. https://www.osti.gov/servlets/purl/1352928.
@article{osti_1352928,
title = {Gate-tunable electron interaction in high-κ dielectric films},
author = {Kondovych, Svitlana and Luk’yanchuk, Igor and Baturina, Tatyana I. and Vinokur, Valerii M.},
abstractNote = {The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-k) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. Lastly, our findings open a unique laboratory for the in-depth study of topological phase transitions and a plethora of related phenomena, ranging from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.},
doi = {10.1038/srep42770},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {2017},
month = {2}
}