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Title: Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO 3

Abstract

We can use epitaxial strain to tune the properties of complex oxides with perovskite structure. Beyond just lattice mismatch, the use of octahedral rotation mismatch at heterointerfaces could also provide a route to manipulate material properties. We examine the evolution of the lattice (i.e., parameters, symmetry, and octahedral rotations) of SrRuO3 films grown on substrates engineered to have the same lattice parameters, but 2 different octahedral rotations. SrRuO3 films grown on SrTiO3 (001) (no octahedral rotations) and GdScO3-buffered SrTiO3 (001) (with octahedral rotations) substrates are found to exhibit monoclinic and tetragonal symmetry, respectively. Electrical transport and magnetic measurements reveal that the tetragonal films exhibit higher resistivity, lower magnetic Curie temperatures, and more isotropic magnetism as compared to those with monoclinic structure. Synchrotron-based half-order Bragg peak analysis reveals that the octahedral rotation pattern in both film variants is the same (albeit with slightly different magnitudes of in-plane rotation angles). Furthermore, the abnormal rotation pattern observed in tetragonal SrRuO3 indicates a possible decoupling between the internal octahedral rotation and lattice symmetry, which could provide new opportunities to engineer thin-film structure and properties.

Authors:
 [1];  [2];  [2];  [3];  [4];  [4];  [2];  [5];  [6];  [2];  [6]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  2. Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab. and CAS Key Lab. of Materials for Energy Conversion
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  4. Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering
  5. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  6. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1352653
Alternate Identifier(s):
OSTI ID: 1456948
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231; SC0012375
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 8; Journal Issue: 23; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; SrRuO3; crystal symmetry; epitaxial strain; interfacial engineering; octahedral rotation

Citation Formats

Gao, Ran, Dong, Yongqi, Xu, Han, Zhou, Hua, Yuan, Yakun, Gopalan, Venkatraman, Gao, Chen, Fong, Dillon D., Chen, Zuhuang, Luo, Zhenlin, and Martin, Lane W. Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO 3. United States: N. p., 2016. Web. doi:10.1021/acsami.6b02864.
Gao, Ran, Dong, Yongqi, Xu, Han, Zhou, Hua, Yuan, Yakun, Gopalan, Venkatraman, Gao, Chen, Fong, Dillon D., Chen, Zuhuang, Luo, Zhenlin, & Martin, Lane W. Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO 3. United States. doi:10.1021/acsami.6b02864.
Gao, Ran, Dong, Yongqi, Xu, Han, Zhou, Hua, Yuan, Yakun, Gopalan, Venkatraman, Gao, Chen, Fong, Dillon D., Chen, Zuhuang, Luo, Zhenlin, and Martin, Lane W. Tue . "Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO 3". United States. doi:10.1021/acsami.6b02864. https://www.osti.gov/servlets/purl/1352653.
@article{osti_1352653,
title = {Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO 3},
author = {Gao, Ran and Dong, Yongqi and Xu, Han and Zhou, Hua and Yuan, Yakun and Gopalan, Venkatraman and Gao, Chen and Fong, Dillon D. and Chen, Zuhuang and Luo, Zhenlin and Martin, Lane W.},
abstractNote = {We can use epitaxial strain to tune the properties of complex oxides with perovskite structure. Beyond just lattice mismatch, the use of octahedral rotation mismatch at heterointerfaces could also provide a route to manipulate material properties. We examine the evolution of the lattice (i.e., parameters, symmetry, and octahedral rotations) of SrRuO3 films grown on substrates engineered to have the same lattice parameters, but 2 different octahedral rotations. SrRuO3 films grown on SrTiO3 (001) (no octahedral rotations) and GdScO3-buffered SrTiO3 (001) (with octahedral rotations) substrates are found to exhibit monoclinic and tetragonal symmetry, respectively. Electrical transport and magnetic measurements reveal that the tetragonal films exhibit higher resistivity, lower magnetic Curie temperatures, and more isotropic magnetism as compared to those with monoclinic structure. Synchrotron-based half-order Bragg peak analysis reveals that the octahedral rotation pattern in both film variants is the same (albeit with slightly different magnitudes of in-plane rotation angles). Furthermore, the abnormal rotation pattern observed in tetragonal SrRuO3 indicates a possible decoupling between the internal octahedral rotation and lattice symmetry, which could provide new opportunities to engineer thin-film structure and properties.},
doi = {10.1021/acsami.6b02864},
journal = {ACS Applied Materials and Interfaces},
number = 23,
volume = 8,
place = {United States},
year = {2016},
month = {5}
}

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Works referencing / citing this record:

Disentangling lattice and electronic contributions to the metal–insulator transition from bulk vs. layer confined RNiO 3
journal, July 2019

  • Georgescu, Alexandru B.; Peil, Oleg E.; Disa, Ankit S.
  • Proceedings of the National Academy of Sciences, Vol. 116, Issue 29
  • DOI: 10.1073/pnas.1818728116

Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure
journal, July 2019

  • Dong, Yongqi; Ma, Zhiyuan; Luo, Zhenlin
  • Advanced Materials Interfaces, Vol. 6, Issue 17
  • DOI: 10.1002/admi.201900644

Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure
journal, July 2019

  • Dong, Yongqi; Ma, Zhiyuan; Luo, Zhenlin
  • Advanced Materials Interfaces, Vol. 6, Issue 17
  • DOI: 10.1002/admi.201900644

Disentangling lattice and electronic contributions to the metal–insulator transition from bulk vs. layer confined RNiO 3
journal, July 2019

  • Georgescu, Alexandru B.; Peil, Oleg E.; Disa, Ankit S.
  • Proceedings of the National Academy of Sciences, Vol. 116, Issue 29
  • DOI: 10.1073/pnas.1818728116