skip to main content

DOE PAGESDOE PAGES

Title: Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In 2O 3 films grown on ionically conducting Y 2O 3-stabilized ZrO 2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.
Authors:
 [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1352628

Veal, Boyd W., Kim, Seong Keun, Zapol, Peter, Iddir, Hakim, Baldo, Peter M., and Eastman, Jeffrey A.. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures. United States: N. p., Web. doi:10.1038/ncomms11892.
Veal, Boyd W., Kim, Seong Keun, Zapol, Peter, Iddir, Hakim, Baldo, Peter M., & Eastman, Jeffrey A.. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures. United States. doi:10.1038/ncomms11892.
Veal, Boyd W., Kim, Seong Keun, Zapol, Peter, Iddir, Hakim, Baldo, Peter M., and Eastman, Jeffrey A.. 2016. "Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures". United States. doi:10.1038/ncomms11892. https://www.osti.gov/servlets/purl/1352628.
@article{osti_1352628,
title = {Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures},
author = {Veal, Boyd W. and Kim, Seong Keun and Zapol, Peter and Iddir, Hakim and Baldo, Peter M. and Eastman, Jeffrey A.},
abstractNote = {Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.},
doi = {10.1038/ncomms11892},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {6}
}