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Title: Apparent breakdown of Raman selection rule at valley exciton resonances in monolayer Mo S 2

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1351677
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Drapcho, Steven G., Kim, Jonghwan, Hong, Xiaoping, Jin, Chenhao, Shi, Sufei, Tongay, Sefaattin, Wu, Junqiao, and Wang, Feng. Apparent breakdown of Raman selection rule at valley exciton resonances in monolayer Mo S 2. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.165417.
Drapcho, Steven G., Kim, Jonghwan, Hong, Xiaoping, Jin, Chenhao, Shi, Sufei, Tongay, Sefaattin, Wu, Junqiao, & Wang, Feng. Apparent breakdown of Raman selection rule at valley exciton resonances in monolayer Mo S 2. United States. https://doi.org/10.1103/PhysRevB.95.165417
Drapcho, Steven G., Kim, Jonghwan, Hong, Xiaoping, Jin, Chenhao, Shi, Sufei, Tongay, Sefaattin, Wu, Junqiao, and Wang, Feng. Thu . "Apparent breakdown of Raman selection rule at valley exciton resonances in monolayer Mo S 2". United States. https://doi.org/10.1103/PhysRevB.95.165417.
@article{osti_1351677,
title = {Apparent breakdown of Raman selection rule at valley exciton resonances in monolayer Mo S 2},
author = {Drapcho, Steven G. and Kim, Jonghwan and Hong, Xiaoping and Jin, Chenhao and Shi, Sufei and Tongay, Sefaattin and Wu, Junqiao and Wang, Feng},
abstractNote = {},
doi = {10.1103/PhysRevB.95.165417},
journal = {Physical Review B},
number = 16,
volume = 95,
place = {United States},
year = {Thu Apr 13 00:00:00 EDT 2017},
month = {Thu Apr 13 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.95.165417

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Cited by: 35 works
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Works referenced in this record:

Anomalous excitonic resonance Raman effects in few-layered MoS 2
journal, January 2015

  • Lee, Jae-Ung; Park, Jaesung; Son, Young-Woo
  • Nanoscale, Vol. 7, Issue 7
  • DOI: 10.1039/C4NR05785F

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
journal, May 2013

  • van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A.
  • Nature Materials, Vol. 12, Issue 6, p. 554-561
  • DOI: 10.1038/nmat3633

Electronic excitations and electron-phonon coupling in bulk graphite through Raman scattering in high magnetic fields
journal, December 2011


Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides
journal, May 2012


Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe 2
journal, November 2013


Multiphonon resonant Raman scattering in MoS 2
journal, March 2014

  • Gołasa, K.; Grzeszczyk, M.; Leszczyński, P.
  • Applied Physics Letters, Vol. 104, Issue 9
  • DOI: 10.1063/1.4867502

Two-dimensional material nanophotonics
journal, November 2014


Phonons in single-layer and few-layer MoS 2 and WS 2
journal, October 2011


A comprehensive multiphonon spectral analysis in MoS 2
journal, June 2015


Interlayer Breathing and Shear Modes in Few-Trilayer MoS 2 and WSe 2
journal, February 2013

  • Zhao, Yanyuan; Luo, Xin; Li, Hai
  • Nano Letters, Vol. 13, Issue 3
  • DOI: 10.1021/nl304169w

Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2
journal, March 2010

  • Lee, Changgu; Yan, Hugen; Brus, Louis E.
  • ACS Nano, Vol. 4, Issue 5
  • DOI: 10.1021/nn1003937

Effective lattice Hamiltonian for monolayer MoS 2 : Tailoring electronic structure with perpendicular electric and magnetic fields
journal, August 2013


Wave vector dependence and numerical value of the scattering efficiency for the resonant Raman effect in CdS
journal, December 1970


Anomalous Raman spectra and thickness-dependent electronic properties of WSe 2
journal, April 2013


Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Unified Description of the Optical Phonon Modes in N -Layer MoTe 2
journal, September 2015


Measurement of the Optical Conductivity of Graphene
journal, November 2008


Raman spectroscopy of shear and layer breathing modes in multilayer MoS 2
journal, March 2013


Gate-Variable Optical Transitions in Graphene
journal, March 2008


Valley-selective optical Stark effect in monolayer WS2
journal, December 2014

  • Sie, Edbert J.; McIver, James W.; Lee, Yi-Hsien
  • Nature Materials, Vol. 14, Issue 3
  • DOI: 10.1038/nmat4156

Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation
journal, May 2009


Identification of individual and few layers of WS2 using Raman Spectroscopy
journal, April 2013

  • Berkdemir, Ayse; Gutiérrez, Humberto R.; Botello-Méndez, Andrés R.
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep01755

Helicity-Resolved Raman Scattering of MoS 2 , MoSe 2 , WS 2 , and WSe 2 Atomic Layers
journal, March 2015


Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Ultrafast generation of pseudo-magnetic field for valley excitons in WSe 2 monolayers
journal, December 2014


Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013

  • Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
  • Nano Letters, Vol. 13, Issue 8, p. 3626-3630
  • DOI: 10.1021/nl4014748

The valley Hall effect in MoS2 transistors
journal, June 2014


Valley-selective circular dichroism of monolayer molybdenum disulphide
journal, January 2012

  • Cao, Ting; Wang, Gang; Han, Wenpeng
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms1882

Fundamentals of Semiconductors
book, January 2010


Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities
journal, September 2009


Monolayer MoS 2 : Trigonal warping, the Γ valley, and spin-orbit coupling effects
journal, July 2013


Interlayer resonant Raman modes in few-layer MoS 2
journal, June 2015


Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012


Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012

  • Zeng, Hualing; Dai, Junfeng; Yao, Wang
  • Nature Nanotechnology, Vol. 7, Issue 8
  • DOI: 10.1038/nnano.2012.95

Theory of the One-Phonon Resonance Raman Effect
journal, November 1971