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Title: Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film

Abstract

Understanding the dynamic behavior of interfaces in ferroic materials is an important field of research with widespread practical implications, as the motion of domain walls and phase boundaries are associated with substantial increases in dielectric and piezoelectric effects. Although commonly studied in the macroscopic regime, the local dynamics of interfaces have received less attention, with most studies limited to domain growth and/or reversal by piezoresponse force microscopy (PFM). Here, spatial mapping of local domain wall-related relaxation in a tensile-strained PbTiO3 thin film using time-resolved band-excitation PFM is demonstrated, which allows exploring of the field-induced strain (piezoresponse) as a function of applied voltage and time. Through multivariate statistical analysis on the resultant 4-dimensional dataset (x,y,V,t) with functional fitting, it is determined that the relaxation is strongly correleated with the distance to the domain walls, and varies based on the type of domain wall present in the probed volume. Phase-field modeling shows the relaxation behavior near and away from the interfaces, and confirms the modulation of the z-component of polarization by wall motion, yielding the observed piezoresponse relaxation. Lastly, these studies shed light on the local dynamics of interfaces in ferroelectric thin films, and are therefore important for the design of ferroelectric-basedmore » components in microelectromechanical systems.« less

Authors:
 [1];  [2];  [2];  [3];  [2];  [4];  [4];  [5];  [2];  [2]
  1. Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge TN 37831 USA; Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an Shaanxi 710049 China
  2. Institute for Functional Imaging of Materials and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge TN 37831 USA
  3. Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an Shaanxi 710049 China
  4. Department of Innovative and Engineered Materials, Department of Material Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 Japan; School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama 226-8502 Japan
  5. Department of Materials Science and Engineering, Pennsylvania State University, State College PA 16801 USA
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Natural Science Foundation of China
OSTI Identifier:
1349612
Grant/Contract Number:  
AC05-00OR22725; 15H04121; 26220907; 51431007; 51321003; IRT13034
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 4; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; domain walls; ferroelectrics; interfaces; piezoresponse force microscopy

Citation Formats

Li, Linglong, Cao, Ye, Somnath, Suhas, Yang, Yaodong, Jesse, Stephen, Ehara, Yoshitaka, Funakubo, Hiroshi, Chen, Long-Qing, Kalinin, Sergei V., and Vasudevan, Rama K. Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film. United States: N. p., 2017. Web. doi:10.1002/aelm.201600508.
Li, Linglong, Cao, Ye, Somnath, Suhas, Yang, Yaodong, Jesse, Stephen, Ehara, Yoshitaka, Funakubo, Hiroshi, Chen, Long-Qing, Kalinin, Sergei V., & Vasudevan, Rama K. Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film. United States. doi:10.1002/aelm.201600508.
Li, Linglong, Cao, Ye, Somnath, Suhas, Yang, Yaodong, Jesse, Stephen, Ehara, Yoshitaka, Funakubo, Hiroshi, Chen, Long-Qing, Kalinin, Sergei V., and Vasudevan, Rama K. Wed . "Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film". United States. doi:10.1002/aelm.201600508. https://www.osti.gov/servlets/purl/1349612.
@article{osti_1349612,
title = {Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film},
author = {Li, Linglong and Cao, Ye and Somnath, Suhas and Yang, Yaodong and Jesse, Stephen and Ehara, Yoshitaka and Funakubo, Hiroshi and Chen, Long-Qing and Kalinin, Sergei V. and Vasudevan, Rama K.},
abstractNote = {Understanding the dynamic behavior of interfaces in ferroic materials is an important field of research with widespread practical implications, as the motion of domain walls and phase boundaries are associated with substantial increases in dielectric and piezoelectric effects. Although commonly studied in the macroscopic regime, the local dynamics of interfaces have received less attention, with most studies limited to domain growth and/or reversal by piezoresponse force microscopy (PFM). Here, spatial mapping of local domain wall-related relaxation in a tensile-strained PbTiO3 thin film using time-resolved band-excitation PFM is demonstrated, which allows exploring of the field-induced strain (piezoresponse) as a function of applied voltage and time. Through multivariate statistical analysis on the resultant 4-dimensional dataset (x,y,V,t) with functional fitting, it is determined that the relaxation is strongly correleated with the distance to the domain walls, and varies based on the type of domain wall present in the probed volume. Phase-field modeling shows the relaxation behavior near and away from the interfaces, and confirms the modulation of the z-component of polarization by wall motion, yielding the observed piezoresponse relaxation. Lastly, these studies shed light on the local dynamics of interfaces in ferroelectric thin films, and are therefore important for the design of ferroelectric-based components in microelectromechanical systems.},
doi = {10.1002/aelm.201600508},
journal = {Advanced Electronic Materials},
number = 4,
volume = 3,
place = {United States},
year = {2017},
month = {3}
}

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