skip to main content

DOE PAGESDOE PAGES

Title: Ga and In adsorption on Si(112): Adsorption sites and superstructure

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
AC02-98CH10886
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 12; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1349542

Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., and Falta, J.. Ga and In adsorption on Si(112): Adsorption sites and superstructure. United States: N. p., Web. doi:10.1103/PhysRevB.95.125441.
Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., & Falta, J.. Ga and In adsorption on Si(112): Adsorption sites and superstructure. United States. doi:10.1103/PhysRevB.95.125441.
Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., and Falta, J.. 2017. "Ga and In adsorption on Si(112): Adsorption sites and superstructure". United States. doi:10.1103/PhysRevB.95.125441.
@article{osti_1349542,
title = {Ga and In adsorption on Si(112): Adsorption sites and superstructure},
author = {Speckmann, M. and Schmidt, Th. and Flege, J. I. and Höcker, J. and Falta, J.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.125441},
journal = {Physical Review B},
number = 12,
volume = 95,
place = {United States},
year = {2017},
month = {3}
}